Abstract:Recently, ultralarge (>10%) strain with fully reversible elastic deformation has been experimentally achieved in silicon nanowires [H. Zhang et al., Sci. Adv. 2, e1501382 (2016)]. With this breakthrough, here in this work, based on the first principles calculation, the structural and electric properties of silicon under ultralarge strain are comparatively investigated. Unlike previous theoretical/simulation investigations on silicon nanowires with only a few nanometers, bulk silicon models are employed here to provide more realistic and comparable results to our experimentally tested samples (∼100 nm diameter). Strong anisotropic effects are induced by loading strain along all different orientations. Simultaneously, the band structures evolution demonstrates electronic anisotropy with the loading strain on three orientations. Silicon keeps an indirect bandgap under increased strain along the ⟨100⟩ orientation while transforming to a direct bandgap with strain along ⟨110⟩ and ⟨111⟩ orientations. Furthermore, ultralarge strain on these two orientations would diminish the bandgap and result into metallization. These results provide insights into understanding “elastic strain engineering” of silicon nanowire applications and demonstrate the possibility of tuning the electronic and optical properties through pure mechanical straining of functional materials.

Uniaxial strain effects on electron ballistic transport in gate-all-around silicon nanowire mosfets

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Mechanical Strain Altered Gate and Substrate Currents in N and P-Channel MOSFETs

Bandstructures of unstrained and strained silicon nanowire

Impact Of Strain On The Performance Of Ge-Si Core-Shell Nanowire Field Effect Transistors

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

The Effects of Strain and Surface Roughness Scattering on the Quasi-Ballistic Characteristics of A Ge Nanowire P-Channel Field-Effect Transistor

First Principles Simulations of Nanoscale Silicon Devices with Uniaxial Strain

Analysis of Stress Effect on (110)-Oriented Single-Gate SOI nMOSFETs Using a Silicon-Thickness-Dependent Deformation Potential

Strain Impacts on Electron Mobility in Silicon Nanowires

Surrounding Strain Effects on the Performance of Si Nanowires Grown in Different Axial Orientations

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

Band Structure Effects in Extremely Scaled Silicon Nanowire MOSFETs With Different Cross Section Shapes

Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices

Superior electron transport of ultra-thin SiC nanowires with one impending tensile monatomic chain

Impacts of Additive Uniaxial Strain on Hole Mobility in Bulk Si and Strained-Si P-Mosfets

Strain Release Enabled Bandgap Scaling in Ge Nanowire and Tunnel FET Application

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires