Abstract:The step-by-step strain evolution in the channel during the SiGe nanosheet (NS) integration process flow for pFETs is demonstrated using finite element analysis (FEA). The effect of device dimensions and defective source/drain (S/D) is studied. After fin formation, the 0.77% compressive biaxial strain resulting from the lattice mismatch between Si0.8Ge0.2 and Si substrate is observed. However, the strain is gradually relaxed during the S/D recess and the inner spacer cavity formation. A large strain is obtained on the channel along the current direction after Si0.6Ge0.4 S/D regrowth, increasing from 0.21% to 1.50% for defect-free S/D epitaxy. The compressive strain along the channel remains similar for different shapes of the S/D regrowth, with small variations between every channel. Decreasing the NS width only leads to an insignificant increase in channel strain until the nanowire structure is formed. Nevertheless, the scaled body thickness can enhance the channel strainxx substantially with the 21.2% compressive strain increase from = 5 nm to = 1 nm. The defective S/D is also simulated with air gaps between the merged epitaxes, where compressive strain in the channel is totally relaxed and further turns into tensile-strained. The hole mobility is expected to have a enhancement with 1.5% compressive strain .

The Effects of Strain and Surface Roughness Scattering on the Quasi-Ballistic Characteristics of A Ge Nanowire P-Channel Field-Effect Transistor

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Impact Of Strain On The Performance Of Ge-Si Core-Shell Nanowire Field Effect Transistors

Mechanical Strain Altered Gate and Substrate Currents in N and P-Channel MOSFETs

Fringing Field Effects in Semiconductor Nanowire Double Heterostructures

Uniaxial strain effects on electron ballistic transport in gate-all-around silicon nanowire mosfets

Effects Of Shell Strain On Valence Band Structure And Transport Properties Of Ge/Si1-Xgex Core-Shell Nanowire

Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>Core–Shell Nanowire

Investigation of Strain Effect on the Hole Mobility in GOI Tri-Gate Pfets Including Quantum Confinement

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Surrounding Strain Effects on the Performance of Si Nanowires Grown in Different Axial Orientations

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Influence of radial stress on the performance of gate-all-around Ge(110) NW FETs with HfO 2 dielectric

Strain Impacts on Electron Mobility in Silicon Nanowires

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Strain Release Enabled Bandgap Scaling in Ge Nanowire and Tunnel FET Application

Effect of surface roughness on quasi-ballistic transport in nano-scale Ge and Si double-gate MOSFETs

Effect of Interface Roughness on the Carrier Transport in Germanium Mosfets Investigated by Monte Carlo Method

Strain Evolution in SiGe Nanosheet Transistor Process Flow

Hole Mobility Enhancements In Strained Inxga1-Xsb Heterostructure P-Channel Mosfets

Influence of boundary force on the performance of gate-all-around Ge (110) NW FETs with HfO2 gate insulator