Abstract:An appreciable mobility enhancement up to 35% is found in p-channel MOSFETs with a strained-Si0.7Ge0.3 surface-channel under an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack, as compared to a Si-channel reference transistor under an identical gate stack. A distorted effective mobility curve with a slow mobility roll-off at low vertical electric field is however extracted for the Si0.7Ge0.3 devices following the standard split-CV measurement procedure. A high density of interface traps on the order of 1012 cm−2eV−1 is found in these Si0.7Ge0.3 devices using charge-pumping measurements. Thus, this distortion is attributed partly to trapping of a significant fraction of the inversion carriers at the interface between the high-κ dielectrics and the Si0.7Ge0.3 channel, thus defeating the validity of the usual formulation for mobility extraction. By taking into account the trapped carriers that are detectable by the split-CV measurement but do not contribute to the drain conductance, a corrected effective mobility curve is obtained. The distortion of the effective mobility curve is nonetheless mainly due to mobility degradation as a result of Coulomb scattering of the mobile channel carriers by the charged interface defects, i.e. charged traps or trapped carriers that remain charged.

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Assessment of hole mobility in strained InSb, GaSb and InGaSb based ultra-thin body pMOSFETs with different surface orientations

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Experimental Investigation on Alloy Scattering in Ssi/ ${\rm Si}_{0.5}{\rm Ge}_{0.5}$ /ssoi Quantum-Well P-Mosfet

Quantifying Hole Mobility Degradation in Pmosfets with a Strained-Si0.7ge0.3 Surface-Channel under an ALD TiN/Al2O3/HfAlOx/Al2O3 Gate Stack

K·p and Monte Carlo Studies of Hole Mobility in Strained-Si Pmos Inversion Layers

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