Abstract:Strain engineering is a widely used technique for enhancing the mobility of charge carriers in semiconductors, but its effect is not fully understood. In this work, we perform first-principles calculations to explore the variations of the mobility of electrons and holes in silicon upon deformation by uniaxial strain up to 2% in the [100] crystal direction. We compute the π 11 and π 12 electron piezoresistances based on the low-strain change of resistivity with temperature in the range 200 K to 400 K, in excellent agreement with experiment. We also predict them for holes which were only measured at room temperature. Remarkably, for electrons in the transverse direction, we predict a minimum room-temperature mobility about 1200 cm 2 V −1 s −1 at 0.3% uniaxial tensile strain while we observe a monotonous increase of the longitudinal transport, reaching a value of 2200 cm 2 V −1 s −1 at high strain. We confirm these findings experimentally using four-point bending measurements, establishing the reliability of our first-principles calculations. For holes, we find that the transport is almost unaffected by strain up to 0.3% uniaxial tensile strain and then rises significantly, more than doubling at 2% strain. Our findings open new perspectives to boost the mobility by applying a stress in the [100] direction. This is particularly interesting for holes for which shear strain was thought for a long time to be the only way to enhance the mobility.

K·p and Monte Carlo Studies of Hole Mobility in Strained-Si Pmos Inversion Layers

Physical Modeling of Hole Mobility in Silicon Inversion Layers under Uniaxial Stress

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Impacts of Additive Uniaxial Strain on Hole Mobility in Bulk Si and Strained-Si P-Mosfets

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

Hole Mobility Enhancements In Strained Inxga1-Xsb Heterostructure P-Channel Mosfets

Investigation of Hole Mobility in Strained InSb Ultrathin Body Pmosfets

Monte Carlo Simulation of Electron Mobility in Strained Si Dg-Fets with Tb Bandstructure Calculation

Assessment of hole mobility in strained InSb, GaSb and InGaSb based ultra-thin body pMOSFETs with different surface orientations

Phonon-limited mobility for electrons and holes in highly-strained silicon

The anisotropic ultrahigh hole mobility in strain-engineering two-dimensional penta-SiC$_2$

Revealing the Scattering Mechanisms of Mobility Degradation in Ultrathin Body SOI Pmosfets

ΔI=3/2 and ΔS=2 Hyperon Decays in Chiral Perturbation Theory [phys. Lett. B 409 (1997) 469]

The Anisotropic Ultrahigh Hole Mobility in Strain-Engineering Two-Dimensional Penta-Sic_2

Anisotropic ultrahigh hole mobility in two-dimensional penta-SiC2 by strain-engineering: electronic structure and chemical bonding analysis

Mobility Enhancement of Strained GaSb P-Channel Metal Oxide Semiconductor Field-Effect Transistors with Biaxial Compressive Strain

A discussion on the universality of inversion layer mobility in MOSFET's

Investigation of Strain Effect on the Hole Mobility in GOI Tri-Gate Pfets Including Quantum Confinement

Anisotropic Hole Drift Velocity in 4H-SiC

Inversion Layer Mobility in High-k Dielectric MOSFETs - Intrinsic Mobility Degradation by Electric Dipoles at High-k/SiO2 Interface

Hole mobility in InSb-based devices: Dependency on surface orientation, body thickness and strain