Anisotropic Hole Drift Velocity in 4H-SiC

Jackelinne L. Vasconcelos,Clóves Gonçalves Rodrigues,Roberto Luzzi
DOI: https://doi.org/10.1016/j.mseb.2019.114426
2021-10-03
Abstract:A theoretical study on the nonlinear transport of holes in the transient and steady state of p-doped 4H-SiC under the influence of high electric fields is presented. It is based on a nonlinear quantum kinetic theory which provides a clear description of the dissipative phenomena that are evolving in the system. The hole drift velocity and the nonequilibrium temperature are obtained, and their dependence on the electric field strength is derived and analyzed.
Materials Science
What problem does this paper attempt to address?
The main problem that this paper attempts to solve is to study the nonlinear transport characteristics of holes in p - type doped 4H - SiC (a polytype of silicon carbide) under the influence of a high electric field. Specifically, the authors focus on: 1. **Anisotropy of hole drift velocity**: Due to the hexagonal symmetry of the 4H - SiC crystal structure, the effective mass of holes is significantly different in the directions parallel and perpendicular to the c - axis. Therefore, the performance of the hole drift velocity is also different in different directions. 2. **Influence of non - equilibrium temperature**: Under the action of a high electric field, how does the non - equilibrium temperature of the hole system change, and how does this change affect the transport properties of holes? 3. **Transient and steady - state behaviors**: Study the variation law of the hole drift velocity and non - equilibrium temperature with time during the evolution process from the transient state to the steady - state. By using the non - equilibrium quantum kinetic theory (based on the non - equilibrium statistical ensemble formalism NESEF), the authors aim to gain an in - depth understanding of these phenomena and provide theoretical support for the development of high - performance electronic devices. Specifically, understanding the transport properties of holes is crucial for optimizing the design of vertical power devices (such as Schottky diodes). ### Summary of mathematical formulas - **Effective mass of holes**: - Effective mass in the direction parallel to the c - axis: \( m_h^{\parallel} = 1.60m_0 \) - Effective mass in the direction perpendicular to the c - axis: \( m_h^{\perp} = 0.59m_0 \) - **Non - equilibrium temperature**: - Non - equilibrium temperature of holes: \( T_h^* \) - Non - equilibrium temperature of LO phonons: \( T_{LO}^* \) - Non - equilibrium temperature of TO phonons: \( T_{TO}^* \) - Non - equilibrium temperature of AC phonons: \( T_{AC}^* \) - **Relationship between basic variables and non - equilibrium thermodynamic variables**: \[ \beta_h^*(t)=\frac{1}{k_B T_h^*(t)} \] \[ \mu_h^*(t)=k_B T_h^*(t)\ln\left(\frac{n}{\left(\frac{2\pi k_B T_h^*(t)}{\hbar^2}\right)^{3/2}m_h^*}\right) \] These formulas and parameters are used to describe the kinetic processes of holes and their interactions with phonons, thus explaining the changes in the hole drift velocity and non - equilibrium temperature.