Abstract:The channel conduction in 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs) are highly impacted by charge trapping and scattering at the interface. Even though nitridation reduces the interface trap density, scattering still plays a crucial role in increasing the channel resistance in these transistors. In this work, the dominant scattering mechanisms are distinguished for inversion layer electrons and holes using temperature and body-bias-dependent Hall measurements on nitrided lateral 4H-SiC MOSFETs. The effect of the transverse electric field (Eeff) on carrier mobility is analyzed under strong inversion condition where surface roughness scattering becomes prevalent. Power law dependencies of the electron and hole Hall mobility for surface roughness scattering are determined to be Eeff-1.8 and Eeff-2.4, respectively, analogous to those of silicon MOSFETs. Moreover, for n-channel MOSFETs, the effect of phonon scattering is observed at zero body bias, whereas in p-channel MOSFETs, it is observed only under negative body biases. Along with the identification of regimes governed by different scattering mechanisms, these results highlight the importance of the selection of substrate doping and of Eeff in controlling the value of channel mobility in 4H-SiC MOSFETs.

Anisotropic Hole Drift Velocity in 4H-SiC

Phonon-limited carrier mobilities and Hall factors in <i>4H-SiC</i> from first principles

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Origin of hole mobility anisotropy in 4H-SiC

Anisotropic drift diffusion model for 4H-, 6H-SiC devices simulation

Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure

Band structure anisotropy effects on the ultrafast electron transport in 4H-SiC

Experimental and theoretical study on anisotropic electron mobility in 4H‐SiC

An Ensemble Monte Carlo Study of Electron Transport in Nitrogen-Doped 4H-SiC

K·p and Monte Carlo Studies of Hole Mobility in Strained-Si Pmos Inversion Layers

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

Measurement of the drift velocities of electrons and holes in high-ohmic <100> silicon

Theory of the anisotropy of the electron Hall mobility in n-type 4H– and 6H–SiC

Hot hole transport and noise phenomena in silicon at cryogenic temperatures from first principles

Monte Carlo study of electron transport in SiC

Simulation of spin-polarized transport in SiGe/Ge/SiGe geterostructure

Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields

High-field transport properties of bulk Si: A test for the Fokker-Planck approach

Electronic Transport in the Silicon Carbide Semiconductor in Phase 3C

High field transport in strained Si/GeSi double heterostructure: a Fokker-Planck approach