Abstract:A simulation framework that couples atomistic electronic structures to Boltzmann transport formalism is developed and applied to calculate the transport characteristics of thin silicon nanowires (NWs) up to 12nm in diameter. The sp3d5s*-spin-orbit-coupled atomistic tight-binding (TB) model is used for the electronic structure calculation. Linearized Boltzmann transport theory is applied, including carrier scattering by phonons, surface roughness (SRS), and impurities. We present a comprehensive investigation of the low-field mobility in silicon NWs considering: i) n- and p-type NWs, ii) [100], [110], and [111] transport orientations, and iii) diameters from D=12nm (electronically almost bulk-like) down to D=3nm (ultra-scaled). The simulation results display strong variations in the characteristics of the different NW types. For n-type NWs, phonon scattering and SRS become stronger as the diameter is reduced and drastically degrade the mobility by up to an order of magnitude depending on the orientation. For the [111] and [110] p-type NWs, on the other hand, large mobility enhancements (of the order of ~4X) can be achieved as the diameter scales down to D=3nm. This enhancement originates from the increase in the subband curvatures as the diameter is scaled. It overcompensates for the mobility reduction caused by SRS in narrow NWs and offers an advantage with diameter scaling. Our results may provide understanding of recent experimental measurements, as well as guidance in the design of NW channel devices with improved transport properties.

Measurement of the drift velocities of electrons and holes in high-ohmic <100> silicon

Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

Non-Ohmic Effects in Hopping Conduction in Doped Silicon and Germanium Between 0.05 and 1 K

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Anisotropic Hole Drift Velocity in 4H-SiC

Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

Electrical Characterization of Doped Silicon Using High-Frequency Electromagnetic Waves

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Electron mobility along 〈0001〉 and 〈11̅00〉 directions in 4H-SiC over a wide range of donor concentration and temperature

High-field transport properties of bulk Si: A test for the Fokker-Planck approach

Hopping Conduction in Partially Compensated Doped Silicon.

Low-Temperature Electron Transport in [110] and [100] Silicon Nanowires: A DFT - Monte Carlo study

Determination of Doping and Temperature Dependent Elastic Constants of Degenerately Doped Silicon from MEMS Resonators

Free electron density and mobility in high-quality 4H–SiC

On the Cooling of Electrons in a Silicon Inversion Layer

Balance equation approach to hot electron transport in many-valley semiconductors: Comparing with the Monte Carlo results for n-type Si

High frequency CV measurements of SiC MOS capacitors

Low Temperature Investigation of Electrical Conduction in Polysilicon: Simulation and Experiment

Atomistic simulations of low-field mobility in Si nanowires: Influence of confinement and orientation

Rigorous Modeling and Investigation of Low-Field Hole Mobility in Silicon and Germanium Gate-All-Around Nanosheet Transistors