Abstract:Czochralski (CZ) silicon is a base material for manufacturing integrated circuits (ICs). The mechanical strength of CZ silicon determines the processing limitations and often dominates the issues related to packaging and failure of ICs. With the ever-smaller feature size of ICs, the scaling of device dimensions may indirectly lead to increase the stress in silicon substrate, thus increasing the probability of generating dislocations. Consequently, improving the mechanical strength of CZ silicon is of significance for increasing the manufacturing yield of ICs. In this work, we propose a strategy of co-doping germanium (Ge) impurity and nitrogen (N) impurity into CZ silicon to achieve better mechanical strength. In order to explore the feasibility of such a strategy, we comparatively investigate the room-temperature hardness and dislocation gliding behaviors in the temperature range of 600–1200 ℃ in the conventional CZ silicon, Ge-doped CZ silicon, N-doped CZ silicon, as well as N and Ge co-doped CZ silicon. The significant experimental results are described as follows. 1) Ge-doping, N-doping or co-doping of Ge and N hardly influences the hardness and therefore the dislocation gliding behavior at room temperature. 2) The suppressing effect of N-doping on the dislocation gliding is remarkable at 600–1000 ℃ and becomes weakened at the temperatures higher than 1100 ℃, while Ge-doping hardly affects the dislocation gliding at 600–900 ℃ but exhibits a strong suppressing effect on the dislocation gliding at 1000–1200 ℃. 3) Co-doping Ge and N impurities into CZ silicon can take the complementary advantages of both Ge- and N-doping to suppress the dislocation gliding at 600–1200 ℃. It is believed that N-doping can result in the formation of N-O complex-related pinning agents within the dislocation cores to suppress the dislocation gliding at 600–1000 ℃. For Ge-doping, it is supposed that Ge-O complexes acting as the pinning agents can form near the front of a single dislocation when the temperature is as high as 1000 ℃ and above. In a word, it is verified in this work that co-doping Ge and N into CZ silicon can further improve the mechanical strength at the processing temperatures of ICs fabrication.

Determination of Doping and Temperature Dependent Elastic Constants of Degenerately Doped Silicon from MEMS Resonators

Temperature Compensation Method for MEMS Accelerometer Based on Resonant Frequency

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

Variations of High-Pressure Thermoelectric and Mechanical Properties of Si Single Crystals under Doping with N and P–T Pre-Treatment

Non-Ohmic Effects in Hopping Conduction in Doped Silicon and Germanium Between 0.05 and 1 K

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Nonlinear piezoresistive effect of 4H–SiC for applications of high temperature pressure sensors

Temperature and Doping Dependence of the Raman Scattering in 4H-Sic

Mechanical Strength of Czochralski Silicon Crystal: Effects of Co-Doping Germanium and Nitrogen

Temperature-frequency Drift Suppression Via Electrostatic Stiffness Softening in MEMS Resonator with Weakened Duffing Nonlinearity

Analytical Study and Compensation for Temperature Drifts of a Bulk Silicon MEMS Capacitive Accelerometer

The Influence of Doping Concentration on Piezoresistive Temperature Characteristics of Polysilicon Nanofilms

Temperature insensitive design of MEMS resonant accelerometer

Epitaxial Polysilicon MEMS Temperature Sensor With 0.043 °C Resolution at 4-Hz Data Rate

Self-Temperature-Compensated GaN MEMS Resonators Through Strain Engineering Up to 600 K

On the Cooling of Electrons in a Silicon Inversion Layer

Electron paramagnetic resonance of n-type silicon and germanium for applications in 3D thermometry

Measurement and Isolation of Thermal Stress in Silicon-On-Glass MEMS Structures

High-temperature sensitivity complex dielectric/electric modulus, loss tangent, and AC conductivity in Au/(S:DLC)/p-Si (MIS) structures

Hopping Conduction in Partially Compensated Doped Silicon.

Study of Structure and Temperature-Dependent Conductivity in N-Type Nc-Si:H Thin Films