Abstract:A quasi-classical model for calculating DC (direct current) electrical conductivity in crystalline semiconductors with hydrogen-like impurities is developed at the transition from band conduction to impurity hopping conduction with decreasing temperature. This transition from the minimum band conductivity to the maximum hopping conductivity via impurities has the form of a characteristic "kink" in the temperature dependence of the electrical resistivity. The idea of the calculation is to preliminarily determine the transition temperature T j using the standard approach within the framework of the two-band model. The shift of the top of the -band (the bottom of the c -band) into the depth of the band gap due to the formation of a quasi-continuous band of allowed energy values from the excited states of acceptors (donors) is taken into account. This leads to a decrease in the value of a thermal ionization energy of the majority shallow impurities due to a decrease in the maximum localization radius of a hole on an acceptor (an electron on a donor) with increasing impurity concentration. The values of the observed maximum hopping conductivity and drift hopping mobility corresponding to the temperature T j are calculated. The numerical calculation within the framework of the proposed model is consistent with the known experimental data on the electrical conductivity and Hall co efficient of moderately compensated p -Ge crystals doped by neutron transmutation and non-intentionally compensated metallurgically doped n -Ge, as well as n - and p -Si crystals on the insulator side of the Mott insulator-metal concentration phase transition.

Hopping Conduction in Partially Compensated Doped Silicon.

Non-Ohmic Effects in Hopping Conduction in Doped Silicon and Germanium Between 0.05 and 1 K

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

Characteristics of I(A-Si-H)/N+(Mc-Si-H) Junctions and Electron-Transport in P-Doped Mc-Si-H Films

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

Gate-driven transition temperatures of electron hopping behaviors in Hubbard bands formed by dopant-induced QD array in silicon nanowire

Hopping Conduction via Ionic Liquid Induced Silicon Surface States

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

Temperature-dependent carrier transport behaviors in phosphorus-doped silicon nanocrystals/silicon carbide multilayers

Maximum Hopping Direct Current Conductivity via Hydrogen-like Impurities in Semiconductors

Low temperature conduction behavior in highly crystallized undoped microcrystalline silicon thin films

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO 2 Multilayers

Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

Critical behavior of the insulator-to-metal transition in Te-hyperdoped Si

Hopping Conduction in DX-Center-Related Impurity Bands in AlxGa1−xSb, AlxGa1−xAs, and GaAs1−xPx

Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers

Experimental Observations on Metal-Like Carrier Transport and Mott Hopping Conduction Behaviours in Boron-Doped Si Nanocrystal Multilayers

Superconductivity in compensated and uncompensated semiconductors

On the Cooling of Electrons in a Silicon Inversion Layer

Low Temperature Investigation of Electrical Conduction in Polysilicon: Simulation and Experiment

Hopping Conduction and Low-Frequency Dielectric Relaxation in 5 Mol % Mn Doped (pb,sr)tio3 Films