Abstract:In order to clarify the physics of the gating of solids by ionic liquids (ILs) we have gated lightly doped $p$-Si, which is so well studied that it can be called the "hydrogen atom of solid state physics" and can be used as a test bed for ionic liquids. We explore the case where the concentration of induced holes at the Si surface is below $10^{12}\text{cm}^{-2}$, hundreds of times smaller than record values. We find that in this case an excess negative ion binds a hole on the interface between the IL and Si becoming a surface acceptor. We study the surface conductance of holes hopping between such nearest neighbor acceptors. Analyzing the acceptor concentration dependence of this conductivity, we find that the localization length of a hole is in reasonable agreement with our direct variational calculation of its binding energy. The observed hopping conductivity resembles that of well studied $\text{Na}^{+}$ implanted Si MOSFETs.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the influence mechanism of ionic liquids (ILs) on the surface conductivity of silicon (Si) at low temperatures, especially in the case of low surface hole concentrations (below $10^{12} \, \text{cm}^{-2}$). Specifically, the author experimentally studied the surface conductivity of lightly - doped p - type silicon under ionic - liquid gating and explored how the excess negative ions in the ionic liquid interact with the holes on the silicon surface in this case, form discrete surface acceptor states, and lead to the nearest - neighbor hopping conduction phenomenon between these acceptor states. ### Main problems and goals 1. **Basic physical mechanism of ionic - liquid gating**: Study how, during the ionic - liquid gating process, when a negative gate voltage is applied, the excess negative ions migrate to the silicon surface and combine with the holes on the silicon surface to form discrete surface acceptor states. 2. **Conductivity behavior at low surface hole concentrations**: Explore whether the conductivity of the silicon surface is dominated by nearest - neighbor hopping conduction at low surface hole concentrations ($10^{11} \, \text{cm}^{-2}<n < 10^{12} \, \text{cm}^{-2}$), and verify whether this conduction mechanism is similar to the known nearest - neighbor hopping conduction in Na⁺ - implanted Si MOSFETs. 3. **Comparison between theoretical models and experimental results**: Through the comparison between theoretical calculations and experimental data, verify the binding energy and wave - function decay length of the surface acceptor states formed under ionic - liquid gating, and explain the variation law of the activation energy with the carrier concentration observed in the experiment. ### Experimental methods and results - **Experimental setup**: Use a platinum electrode and the ionic liquid DEME - TFSI to perform a gating experiment on boron - doped p - type silicon and measure the sheet resistance at different gate voltages. - **Experimental results**: At high temperatures (> 20 K), the conductivity is mainly contributed by the bulk conductance; while at low temperatures (< 20 K), the conductivity exhibits activation behavior, and the activation energy changes with the gate voltage. This indicates that at low temperatures, the conductivity is mainly dominated by the nearest - neighbor hopping conduction between the surface acceptor states. - **Theoretical analysis**: Calculate the binding energy and wave - function decay length of a single ionic - liquid acceptor state by the variational method and compare them with the experimental results. It is found that the theoretical prediction is basically consistent with the experimental results. ### Conclusions The main conclusion drawn in the paper is that for p - type silicon under ionic - liquid gating at low surface hole concentrations, the conductivity is mainly dominated by the nearest - neighbor hopping conduction between the surface acceptor states, and this conduction mechanism is very similar to the nearest - neighbor hopping conduction in Na⁺ - implanted Si MOSFETs. This indicates that ionic liquids can be used as an effective surface acceptor source to regulate the electrical properties of semiconductor materials. ### Future prospects Future research can further explore the conductivity behavior at lower hole densities, study the influence of different ionic liquids, and apply this method to other new materials to better understand the electrical parameters of these materials.

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