Abstract:A quasi-classical model for calculating DC (direct current) electrical conductivity in crystalline semiconductors with hydrogen-like impurities is developed at the transition from band conduction to impurity hopping conduction with decreasing temperature. This transition from the minimum band conductivity to the maximum hopping conductivity via impurities has the form of a characteristic "kink" in the temperature dependence of the electrical resistivity. The idea of the calculation is to preliminarily determine the transition temperature T j using the standard approach within the framework of the two-band model. The shift of the top of the -band (the bottom of the c -band) into the depth of the band gap due to the formation of a quasi-continuous band of allowed energy values from the excited states of acceptors (donors) is taken into account. This leads to a decrease in the value of a thermal ionization energy of the majority shallow impurities due to a decrease in the maximum localization radius of a hole on an acceptor (an electron on a donor) with increasing impurity concentration. The values of the observed maximum hopping conductivity and drift hopping mobility corresponding to the temperature T j are calculated. The numerical calculation within the framework of the proposed model is consistent with the known experimental data on the electrical conductivity and Hall co efficient of moderately compensated p -Ge crystals doped by neutron transmutation and non-intentionally compensated metallurgically doped n -Ge, as well as n - and p -Si crystals on the insulator side of the Mott insulator-metal concentration phase transition.

Maximum Hopping Direct Current Conductivity via Hydrogen-like Impurities in Semiconductors

Non-Ohmic Effects in Hopping Conduction in Doped Silicon and Germanium Between 0.05 and 1 K

Hopping conductivity and insulator-metal transition in films of touching semiconductor nanocrystals

Hopping Conduction in Partially Compensated Doped Silicon.

On the Transport Diamonds and Zero Current Anomaly in InGaAs/InP and GaAs/AlGaAs

Ab initio estimate of temperature dependence of electrical conductivity in a model amorphous material: hydrogenated amorphous silicon

Magnon Transport and Thermal Properties of Confined Anisotropic CrI3

Hopping Conduction in DX-Center-Related Impurity Bands in AlxGa1−xSb, AlxGa1−xAs, and GaAs1−xPx

Conductivity of two-dimensional narrow gap semiconductors subjected to strong Coulomb disorder

Universal Frequency Dependence of the Hopping AC Conductance in p-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime

Potential Fluctuations in Heterostructure Devices

The metal-semiconductor transition in three-dimensional disordered systems-reanalysis of recent experiments for and against minimum metallic conductivity

Metal-Insulator Transition in Homogeneously Doped Germanium

Conductance of Quantum Impurity Models from Quantum Monte Carlo

Electrical spin orientation, spin-galvanic and spin-Hall effects in disordered two-dimensional systems

Extrinsic Anomalous Hall effect in Mn Doped GeSnTe Semiconductors in the Bad Metal Hopping Regime

Finite Conductivity in Mesoscopic Hall Bars of Inverted InAs/GaSb Quantum Wells

Variable range hopping in a non-equilibrium steady state

The Frequency Dependent Conductivity of Electron Glasses

Hopping Conduction via Ionic Liquid Induced Silicon Surface States

Impurity concentration dependent electrical conduction in germanium crystal at low temperatures