Abstract:Glassy behavior is manifested by three time-dependent characteristics of a dynamic physical property. Such behaviors have been found in the electrical conductivity transients of various disordered systems, but the mechanisms that yield the glassy behavior are still under intensive debate. The focus of the present work is on the effect of the quantum confinement (QC) and the Coulomb blockade (CB) effects on the experimentally observed glassy-like behavior in semiconductor nanomaterials. Correspondingly, we studied the transient electrical currents in semiconductor systems that contain CdSe or Si nanosize crystallites, as a function of that size and the ambient temperature. In particular, in contrast to the more commonly studied post-excitation behavior in electronic glassy systems, we have also examined the current transients during the excitation. This has enabled us to show that the glassy behavior is a result of the nanosize nature of the studied systems and thus to conclude that the observed characteristics are sensitive to the above effects. Following this and the temperature dependence of the transients, we derived a more detailed macroscopic and microscopic understanding of the corresponding transport mechanisms and their glassy manifestations. We concluded that the observed electrical transients must be explained not only by the commonly suggested principle of the minimization of energy upon the approach to equilibrium, as in the mechanical (say, viscose) glass, but also by the principle of minimal energy dissipation by the electrical current which determines the percolation network of the electrical conductivity. We further suggest that the deep reason for the glassy-like behavior that is observed in the electrical transients of the nanomaterials studied is the close similarity between the localization range of electrons due to the Coulomb blockade and the caging range of the uncharged atomic-size particles in the classical mechanical glass. These considerations are expected to be useful for the understanding and planning of semiconductor nanodevices such as corresponding quantum dot memories and quantum well MOSFETs.

The Frequency Dependent Conductivity of Electron Glasses

Dynamics of Glass Phases in the Two-Dimensional Gauge Glass Model

The mechanism of electrical conduction in glassy semiconductors

Thermally Driven Fermi Glass States in Warm Dense Matter: Effects on Terahertz and Direct-Current Conductivities

Electron glass effects in amorphous NbSi films

Measurements of the Complex Conductivity of NbxSi1-x Alloys on the Insulating Side of the Metal-Insulator Transition

Electron Glass in a three-dimensional system

Electron glass signatures up to room temperature in disordered insulators

Transition to exponential relaxation in weakly-disordered electron-glasses

Collective modes in quantum electron glasses and electron-assisted hopping

Glassy-like Transients in Semiconductor Nanomaterials

Usage of Red supergiant spectral features as age indicators in starburst regions

Quantum Coulomb glass on the Bethe lattice

Variable range hopping in a non-equilibrium steady state

Temperature and field dependence of Dynamics in the Electron-Glass

Electronic structure and the glass transition in pnictide and chalcogenide semiconductor alloys. Part I: The formation of the $ppσ$-network

Mode localization and suppressed heat transport in amorphous alloys

Temperature-dependent electrical investigations and explication of the equivalent operational Warburg impedance by Bode and Nyquist plots of Yb3+ doped silicate glass

Dielectric Relaxation and AC Conductivity of Fe-Doped Glassy Semiconductors: Role of Fe Doping on Relaxation Time

Frequency-Dependent Response near the Glass Transition: A Theoretical Model

Non-Arrhenius ionic conductivities in glasses due to a distribution of activation energies