Abstract:AC conductivity and dielectric parameters are supposed to be two noticeable parameters that ensure the applicability of present samples for electronic and other applications. Presently, Fe-doped glassy semiconductors were developed and characterized using Fourier-transform infrared spectroscopy, scanning electron microscopy, energy-dispersive X-ray analsysis, and decoupling index for structural, morphological, and elemental examinations. Frequency-dependent dielectric constant, AC conductivity, and dielectric loss have been explored in a wide frequency and temperatures ranges. Electric modulus formalism has been conceived as it can exclude the electrode polarization effect at low-frequency regimes and suggest the transition from long-range mobility to short-range mobility assembly of polarons. It is also noteworthy that relaxation times are found to decrease with temperatures, which may indicate something about the faster movement of charge carriers. The variation of KWW parameters directly indicate that after doping of Fe content into the resultant materials, the relaxation process is shifted from Non-Debye to Debye type up to a limit.

Dielectric Relaxation and AC Conductivity of Fe-Doped Glassy Semiconductors: Role of Fe Doping on Relaxation Time