Abstract:Glassy behavior is manifested by three time-dependent characteristics of a dynamic physical property. Such behaviors have been found in the electrical conductivity transients of various disordered systems, but the mechanisms that yield the glassy behavior are still under intensive debate. The focus of the present work is on the effect of the quantum confinement (QC) and the Coulomb blockade (CB) effects on the experimentally observed glassy-like behavior in semiconductor nanomaterials. Correspondingly, we studied the transient electrical currents in semiconductor systems that contain CdSe or Si nanosize crystallites, as a function of that size and the ambient temperature. In particular, in contrast to the more commonly studied post-excitation behavior in electronic glassy systems, we have also examined the current transients during the excitation. This has enabled us to show that the glassy behavior is a result of the nanosize nature of the studied systems and thus to conclude that the observed characteristics are sensitive to the above effects. Following this and the temperature dependence of the transients, we derived a more detailed macroscopic and microscopic understanding of the corresponding transport mechanisms and their glassy manifestations. We concluded that the observed electrical transients must be explained not only by the commonly suggested principle of the minimization of energy upon the approach to equilibrium, as in the mechanical (say, viscose) glass, but also by the principle of minimal energy dissipation by the electrical current which determines the percolation network of the electrical conductivity. We further suggest that the deep reason for the glassy-like behavior that is observed in the electrical transients of the nanomaterials studied is the close similarity between the localization range of electrons due to the Coulomb blockade and the caging range of the uncharged atomic-size particles in the classical mechanical glass. These considerations are expected to be useful for the understanding and planning of semiconductor nanodevices such as corresponding quantum dot memories and quantum well MOSFETs.

Electron glass signatures up to room temperature in disordered insulators

Electron glass effects in amorphous NbSi films

Evidence for finite-temperature glass transition in two dimensions

Large-scale Dynamical Simulations of the Three-Dimensionalxyspin Glass

Dynamics of Glass Phases in the Two-Dimensional Gauge Glass Model

Electron Glass in a three-dimensional system

Signatures Of Structural Recovery In Colloidal Glasses

Evidence for thermal activation in the glassy dynamics of insulating granular aluminum conductance

Temperature and field dependence of Dynamics in the Electron-Glass

Electron Glass in Ultrathin Granular Al Films at Low Temperatures

Transition to exponential relaxation in weakly-disordered electron-glasses

Electronic glasses from a broken gauge symmetry in disorder-free systems

Intrinsic electron-glass effects in strongly-localized thallium-oxide films

Glassy Dynamics in Geometrically Frustrated Coulomb Liquids without Disorder

Glassy-like Transients in Semiconductor Nanomaterials

The Frequency Dependent Conductivity of Electron Glasses

Nonequilibrium transport and Electron-Glass effects in thin GexTe films

Depletion of two-level systems in ultrastable computer-generated glasses

Melting of the Electron Glass

Ripples in the bottom of the potential energy landscape of metallic glass

Observation of Fluctuation-Dissipation-Theorem Violations in a Structural Glass