Potential Fluctuations in Heterostructure Devices

John H. Davies,John A. Nixon,Harold U. Baranger

DOI: https://doi.org/10.1007/978-1-4684-1348-9_30

1991-01-01

Abstract:Ionized donors in a doped heterostructure have random positions, which gives rise to a random potential with long-ranged fluctuations. This has a small effect on fast electrons, allowing high mobilities in two-dimensional electron gases, but becomes much more significant when the density of electrons is low. We have analysed the effect of this random potential using a semi-classical, self-consistent method to calculate the density of electrons. This includes a realistic potential from a patterned gate, and is followed by a quantum-mechanical calculation of the conductance.A nominally uniform two-dimensional electron gas becomes inhomogeneous as its average density is lowered, eventually breaking into isolated puddles and undergoing a classical metal-insulator transition. A quantum wire is strongly distorted by the random potential, which impedes ballistic propagation. The wire becomes discontinuous before it is narrow enough to support monomode propagation. The conductance of a short constriction or ‘point contact’ (0.2 μm) is well quantized. The guiding potential is rounded, suppressing resonances within the constriction. Quantization in a longer constriction (0.6 μm) is spoiled by scattering from the random potential. These results agree well with experiments by G.L. Timp et al.