Abstract:Effect of Ge-doping at the non-magnetic site (Si-site) of the Mn-based binary alloy Mn 5 Si 3 has been explored through temperature-dependent x-ray diffraction, dc-magnetic, and electrical transport measurements. All the doped alloys show D 8 8 type hexagonal structure with space group P 6 3 / m c m at room temperature and undergoes two structural distortions, hexagonal ( P 6 3 / m c m ) → orthorhombic ( C c m m ) → orthorhombic ( C c 2 m ), on cooling. The magnetic characters of these orthorhombic ( C c 2 m ), orthorhombic ( C c m m ), and hexagonal ( P 6 3 / m c m ) phases are non-collinear antiferromagnetic (AFM1), collinear antiferromagnetic (AFM2), and paramagnetic (PM), respectively. Doping of Ge results in a significant increase in the AFM1 to AFM2 transition temperature ( T N 1 ). However, the AFM2 to PM transition point remains unchanged. In addition, a reasonable increase in the critical field values of the AFM1 to AFM2 transition via another non-collinear antiferromagnetic phase (AFM1 ′ ) with increasing Ge concentration has been observed, indicating the strengthening of AFM1 and AFM1 ′ phases over the AFM2 phase. Such behaviors make the observation of unusual magnetic properties of undoped Mn 5 Si 3 alloys, like inverted hysteresis loop (IHL) and thermomagnetic irreversibility (TI), more evident for these Ge-doped alloys. Further, this study unfolds the presence of conventional and inverse magnetocaloric effect and they found to decrease with Ge doping. An interesting interplay for positive and negative magnetoresistance has also been observed in all the studied alloys.

Metal-Insulator Transition in Homogeneously Doped Germanium

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Analysis of the resistance in p-SiGe over a wide temperature range

Effects of Germanium on Movement of Dislocations in P-Type Czochralski Silicon

Germanium in Czochralski Silicon

Non-Ohmic Effects in Hopping Conduction in Doped Silicon and Germanium Between 0.05 and 1 K

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Half-metallic ferromagnetism in transition-metal doped germanium nitride: A first-principles study

Magnetism Inmnxge1−xsemiconductors Mediated by Impurity Band Carriers

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Influence of Ge-doping on the collinear and non-collinear antiferromagnetic phases of Mn 5 Si 3 alloy

Novel Germanium-Based Magnetic Semiconductors

Electrical Properties of Germanium Semiconductors at Low Temperatures

Impurity concentration dependent electrical conduction in germanium crystal at low temperatures

Exploring the Metal-Insulator Transition in (Ga,Mn)As by Molecular Absorption

Heavily $n$-doped Ge: low-temperature magnetoresistance properties

Observation of Distinct Superconducting Phases in Hyperdoped p-type Germanium

Reentrant proximity-induced superconductivity for GeTe semimetal

Metal-insulator transition in amorphous alloys

Non-localized states and high hole mobility in amorphous germanium

Half-metallicity and Magnetism of GeTe Doped with Transition Metals V, Cr and Mn: a Theoretical Study from the Viewpoint of Application in Spintronics