Abstract:Elastic strain engineering utilizes stress to realize unusual material properties. For instance, strain can be used to enhance the electron mobility of a semiconductor, enabling more efficient solar cells and smaller, faster transistors. In the context of nanomechanics, the pursuit of resonators with ultra-high coherence has led to intense study of a complementary strain engineering technique, "dissipation dilution", whereby the stiffness of a material is effectively increased without added loss. Dissipation dilution is known to underlie the anomalously high Q factor of Si$_3$N$_4$ nanomechanical resonators, including recently-developed "soft-clamped" resonators; however, the paradigm has to date relied on weak strain produced during material synthesis. By contrast, the use of geometric strain engineering techniques -- capable of producing local stresses near the material yield strength -- remains largely unexplored. Here we show that geometric strain combined with soft-clamping can produce unprecedentedly high Q nanomechanical resonators. Specifically, using a spatially non-uniform phononic crystal pattern, we colocalize the strain and flexural motion of a Si$_3$N$_4$ nanobeam, while increasing the former to near the yield strength. This combined strategy produces string-like modes with room-temperature Q$\times$frequency products approaching $10^{15}$ Hz, an unprecedented value for a mechanical oscillator of any size. The devices we study can have force sensitivities of aN/rtHz, perform hundreds of quantum coherent oscillations at room temperature, and attain Q > 400 million at radio frequencies. These results signal a paradigm shift in the control of nanomechanical dissipation, with impact ranging from precision force microscopy to tests of quantum gravity. Combining the reported approach with crystalline or 2D materials may lead to further improvement, of as yet unknown limitation.

Self-Temperature-Compensated GaN MEMS Resonators Through Strain Engineering Up to 600 K

Elastic Strain Engineered Nanomechanical GaN Resonators with Thermoelastic Dissipation Dilution Up to 600 K

Temperature Compensation Method for MEMS Accelerometer Based on Resonant Frequency

Strain-enhanced high Q -factor GaN micro-electromechanical resonator.

Strain-enhanced high<i>Q</i>-factor GaN micro-electromechanical resonator

Quasi-linear Frequency Tuning for CMOS-MEMS Resonators

Measurement and Isolation of Thermal Stress in Silicon-On-Glass MEMS Structures

Thermal tuning of mechanical nonlinearity in GaAs doubly-clamped MEMS beam resonators

Temperature-frequency Drift Suppression Via Electrostatic Stiffness Softening in MEMS Resonator with Weakened Duffing Nonlinearity

Low temperature coefficient of frequency AlN Lamb wave resonator using groove structure between interdigital transducers

Temperature Coefficient of Frequency Modeling for Cmos-Mems Bulk Mode Composite Resonators

Temperature insensitive design of MEMS resonant accelerometer

Geometry Characteristics and Wide Temperature Behavior of Silicon-Based GaN Surface Acoustic Wave Resonators with Ultrahigh Quality Factor

Temperature self-compensation strain sensor based on cascaded concave-lens-like long-period fiber gratings

Strain engineering for ultra-coherent nanomechanical oscillators

Optical probing of mechanical loss of a Si_{3}N_{4} membrane below 100 mK

Electrostatically-Driven Resonator on Soi with Improved Temperature Stability

Thermal transport and frequency response of localized modes on low-stress nanomechanical silicon nitride drums featuring a phononic bandgap structure

A Temperature-Insensitive Micromachined Resonant Accelerometer with Thermal Stress Isolation

Giant Enhancement in the Thermal Responsivity of Microelectromechanical Resonators by Internal Mode Coupling

A flexible resistive strain gauge with reduced temperature effect via thermal expansion anisotropic composite substrate