Abstract:Elastic strain engineering utilizes stress to realize unusual material properties. For instance, strain can be used to enhance the electron mobility of a semiconductor, enabling more efficient solar cells and smaller, faster transistors. In the context of nanomechanics, the pursuit of resonators with ultra-high coherence has led to intense study of a complementary strain engineering technique, "dissipation dilution", whereby the stiffness of a material is effectively increased without added loss. Dissipation dilution is known to underlie the anomalously high Q factor of Si$_3$N$_4$ nanomechanical resonators, including recently-developed "soft-clamped" resonators; however, the paradigm has to date relied on weak strain produced during material synthesis. By contrast, the use of geometric strain engineering techniques -- capable of producing local stresses near the material yield strength -- remains largely unexplored. Here we show that geometric strain combined with soft-clamping can produce unprecedentedly high Q nanomechanical resonators. Specifically, using a spatially non-uniform phononic crystal pattern, we colocalize the strain and flexural motion of a Si$_3$N$_4$ nanobeam, while increasing the former to near the yield strength. This combined strategy produces string-like modes with room-temperature Q$\times$frequency products approaching $10^{15}$ Hz, an unprecedented value for a mechanical oscillator of any size. The devices we study can have force sensitivities of aN/rtHz, perform hundreds of quantum coherent oscillations at room temperature, and attain Q > 400 million at radio frequencies. These results signal a paradigm shift in the control of nanomechanical dissipation, with impact ranging from precision force microscopy to tests of quantum gravity. Combining the reported approach with crystalline or 2D materials may lead to further improvement, of as yet unknown limitation.

Strain-enhanced high Q -factor GaN micro-electromechanical resonator.

Strain-enhanced high<i>Q</i>-factor GaN micro-electromechanical resonator

Elastic Strain Engineered Nanomechanical GaN Resonators with Thermoelastic Dissipation Dilution Up to 600 K

Self-Temperature-Compensated GaN MEMS Resonators Through Strain Engineering Up to 600 K

High <i>Q</i> Microresonators Based on Epitaxial GaN Film

Nanomechanical Crystalline AlN Resonators with High Quality Factors for Quantum Optoelectromechanics

Nanotube mechanical resonators with quality factors of up to 5 million

Greater Than One Billion Q Factor for On-Chip Microresonators

歪みによる自己温度補償型窒化物 MEMS 振動子

Integrated tuning fork nanocavity optomechanical transducers with high $f_{M}Q_{M}$ product and stress-engineered frequency tuning

Geometry Characteristics and Wide Temperature Behavior of Silicon-Based GaN Surface Acoustic Wave Resonators with Ultrahigh Quality Factor

Strain engineering for ultra-coherent nanomechanical oscillators

Strain Sensing Based on Gourd-Shaped Optical Microresonator

High Q-Factor Silicon Nitride Nanomechanical Resonators Fabricated by Maskless Femtosecond Laser Micro-machining

Dissipation engineering of high-stress silicon nitride nanobeams

Design of GHz Mechanical Nanoresonator with High Q-Factor Based on Optomechanical System

A GHz Silicon-Based Width Extensional Mode MEMS Resonator with Q over 10,000

Electrically Pumped Optomechanical Beam GaN-LED Accelerometer Based on the Quantum-Confined Stark Effect

Unveiling the tradeoff between device scale and surface nonidealities for an optimized quality factor at room temperature in 2D MoS2 nanomechanical resonators

Optical probing of mechanical loss of a Si_{3}N_{4} membrane below 100 mK