Abstract:High‐Q nanomechanical resonators enable low‐noise sensing and quantum technology applications. This work realizes high‐Q nanomechanical resonators in a crystalline and piezoelectric material by exploiting dissipation dilution in a tensile‐strained AlN thin film. This achievement paves the way for hybrid quantum optoelectromechanical devices operating at room temperature. High‐quality factor (Qm) mechanical resonators are crucial for applications where low noise and long coherence time are required, as mirror suspensions, quantum cavity optomechanical devices, or nanomechanical sensors. Tensile strain in the material enables the use of dissipation dilution and strain engineering techniques, which increase the mechanical quality factor. These techniques have been employed for high‐Qm mechanical resonators made from amorphous materials and, recently, from crystalline materials such as InGaP, SiC, and Si. A strained crystalline film exhibiting substantial piezoelectricity expands the capability of high‐Qm nanomechanical resonators to directly utilize electronic degrees of freedom. In this work, nanomechanical resonators with Qm up to 2.9 × 107 made from tensile‐strained 290 nm‐thick AlN are realized. AlN is an epitaxially‐grown crystalline material offering strong piezoelectricity. Nanomechanical resonators that exploit dissipation dilution and strain engineering to reach a Qm × fm‐product approaching 1013 Hz at room temperature are demonstrated. A novel resonator geometry is realized, triangline, whose shape follows the Al–N bonds and offers a central pad patterned with a photonic crystal. This allows to reach an optical reflectivity above 80% for efficient coupling to out‐of‐plane light. The presented results pave the way for quantum optoelectromechanical devices at room temperature based on tensile‐strained AlN.

High <i>Q</i> Microresonators Based on Epitaxial GaN Film

Fabrication of Microresonators of High Q/V Ratios Using Femtosecond Laser Micromachining

Strain-enhanced high Q -factor GaN micro-electromechanical resonator.

Strain-enhanced high<i>Q</i>-factor GaN micro-electromechanical resonator

Broadband Highly Efficient Nonlinear Optical Processes in On-Chip Integrated Lithium Niobate Microdisk Resonators of Q-factor above 108

Femtosecond Laser Direct Writing of High-Q Microresonators in Glass and Crystals

High-Q Resonators on Single Crystal Aluminum Nitride Grown by Molecular Beam Epitaxy

Integrated Gallium Nitride Microresonators for Broadband Kerr Comb Generation

Lithium niobate microring with ultra-high Q factor above 10^8

High Q Factor Electrically Injected Green Micro Cavity

High Q Resonators in the GaAs and AlGaAs on Insulator Platform

Mid-infrared high-Q germanium microring resonator

Elastic Strain Engineered Nanomechanical GaN Resonators with Thermoelastic Dissipation Dilution Up to 600 K

Monocrystalline AlGaAs heterostructures for high-reflectivity high-Q micromechanical resonators in the MHz regime

High-quality-factor photonic crystal ring resonator.

Single-Mode Silicon-On-Insulator Elliptical Microdisk Resonators with High Q Factors

Dry-etched Ultrahigh-Q Silica Microdisk Resonators on a Silicon Chip

Ultra-high Q Microring Resonators on Gallium-nitride-on-sapphire Platform

Nanomechanical Crystalline AlN Resonators with High Quality Factors for Quantum Optoelectromechanics

Greater Than One Billion Q Factor for On-Chip Microresonators

Fabrication of High-Q Suspended AlGaAs Microresonators for Efficient Kerr Comb Generation