Abstract:In recent years, the remarkable properties and potential applications of III-nitride (III-N) semiconductors have sparked a significant interest in the field of microelectromechanical systems (MEMS). Traditionally, III-N MEMS are fabricated through a process involving the epitaxial growth of III-N epilayers on a silicon substrate followed by etching the handle wafer to generate free-standing structures. In this study, we explore the potential of a relatively simple approach based on the two-dimensional (2D) material-based liftoff and transfer to fabricate III-N mechanical resonators. The methodology involves van der Waals epitaxy of III-N layers on 2D hexagonal-boron nitride (h-BN), which leverages the weak van der Waals adhesion between h-BN layers to lift off and transfer these layers from their original growth substrate to an alternative host substrate. The employed method is demonstrated by fabricating 600 nm thick GaN/AlGaN and 2.5 μm thick h-BN micro-resonators onto pre-patterned cavities etched in silicon substrates. These devices are characterized using laser Doppler vibrometry, enabling the observation of well-defined modes of vibration and resonant frequencies. Furthermore, finite element method simulations are performed to gain insights into the experimental observations and the mechanical properties of the transferred layers. This approach could be extended to transfer high-quality III-N MEMS devices onto various host substrates, including flexible substrates, and could be used to assess the mechanical properties of emerging III-N semiconductor materials.

Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform

Fabrication of GaN-based MEMS Structures Using Dry-Etch Technique

Fabrication of suspending gan microstructures with combinations of anisotropic and isotropic dry etching techniques

GaN on Patterned Silicon (GPS) Technique for GaN-based Integrated Microsensors

Gan on Patterned Silicon (gps) Technique for Fabrication of Gan-Based Mems

Suspended graphene membranes with attached silicon proof masses as piezoresistive NEMS accelerometers

Scaling of piezoelectric in-plane NEMS: Towards nanoscale integration of AlN-based transducer on vertical sidewalls

Design and Testing on High Sensitive Micro-accelerometer Based on HEMT

Strain-enhanced high Q -factor GaN micro-electromechanical resonator.

Microdevice Array Design and Fabrication in Monolithic MEMS SoC

Characterization of AlGaN/GaN cantilevers fabricated with deep-release techniques

Graphene ribbons with suspended masses as transducers in ultra-small nanoelectromechanical accelerometers

A Novel Fabrication Methodology for Micromachined Sensor-Arrays with Multi-Thickness Configuration

Strain-enhanced high<i>Q</i>-factor GaN micro-electromechanical resonator

Characterization of Gan Cantilevers Fabricated with Gan-On-Silicon Platform

Microfabrication of piezoelectric MEMS based on thick LiNbO3 single-crystal films

Simple and Robust Microfabrication of Polymeric Piezoelectric Resonating MEMS Mass Sensors

SiN-masked GaN-on-patterned-silicon (GPS) Technique for Fabrication of Suspended GaN Microstructures

Transfer of III-nitride epitaxial layers onto pre-patterned silicon substrates for the simple fabrication of free-standing MEMS

12 inch MEMS process for sensors implementation and integration

Fabrication of Position-controllable GaN Nanostructures