Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

Fabrication of Position-controllable GaN Nanostructures

Fabrication Of Vertical Position-Controllable Gan Nanowires On (111) Si Substrate

Fabrication of GaN-based MEMS Structures Using Dry-Etch Technique

Fabrication of GaAs Nanowires by Colloidal Lithography and Dry Etching

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Fabrication of suspending gan microstructures with combinations of anisotropic and isotropic dry etching techniques

Gan on Patterned Silicon (gps) Technique for Fabrication of Gan-Based Mems

Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

Fabrication of GaN Nanocolumns with Semipolar Plane Using Ni Nano-Island Masks

SiN-masked GaN-on-patterned-silicon (GPS) Technique for Fabrication of Suspended GaN Microstructures

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Fabrication of Carbon Nanotubes on Interdigitated Metal Electrode for Switchable Nanophotonic Devices

Fabrication Techniques of Nano-Structure

The Fabrication of GaN Quantum Dots Using Metalorganic Chemical Vapor Deposition

Fabrication and Photoluminescence of Ordered GaN Nanowire Arrays

High-yield GaN Nanowire Synthesis and Field-Effect Transistor Fabrication

A Selective Etching Route for Large-Scale Fabrication of β-Ga2O3 Micro-/Nanotube Arrays

Formation of GaN nanostructures with various morphologies by photo-assisted electroless chemical etching

The Fabrication and Optimization of Nanostructures Using Glancing Angle Deposition

Coordinated Stress Management and Dislocation Control in GaN Growth on Si (111) Substrates by Using a Carbon Nanotube Mask.

Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates