Abstract:The direct integration of GaN with Si can boost great potential for low-cost, large-scale, and high-power device applications. However, it is still challengeable to directly grow GaN on Si without using thick strain relief buffer layers due to their large lattice and thermal-expansion-coefficient mismatches. In this work, a GaN/Si heterointerface without any buffer layer is fabricated at room temperature via surface activated bonding (SAB). The residual stress states and interfacial microstructures of GaN/Si heterostructures were systematically investigated through micro-Raman spectroscopy and transmission electron microscopy. Compared to the large compressive stress that existed in GaN layers grown on Si by metalorganic chemical vapor deposition, a significantly relaxed and uniform small tensile stress was observed in GaN layers bonded to Si by SAB; this is mainly ascribed to the amorphous layer formed at the bonding interface. In addition, the interfacial microstructure and stress states of bonded GaN/Si heterointerfaces was found to be significantly tuned by appropriate thermal annealing. With increasing annealing temperature, the amorphous interlayer formed at the as-bonded interface gradually transforms into a thin crystallized interlayer without any observable defects even after annealing at 1000 °C, while the interlayer stresses at both GaN layer and Si monotonically change due to the interfacial re-crystallization. This work moves an important step forward directly integrating GaN to the present Si CMOS technology with high quality thin interfaces and brings great promises for wafer-scale low-cost fabrication of GaN electronics.

Fabrication of suspending gan microstructures with combinations of anisotropic and isotropic dry etching techniques

Fabrication of GaN-based MEMS Structures Using Dry-Etch Technique

Gan on Patterned Silicon (gps) Technique for Fabrication of Gan-Based Mems

Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform

SiN-masked GaN-on-patterned-silicon (GPS) Technique for Fabrication of Suspended GaN Microstructures

Study of GaN Epilayers Growth on Freestanding Si Cantilevers

Transfer of III-nitride epitaxial layers onto pre-patterned silicon substrates for the simple fabrication of free-standing MEMS

Fabrication of Position-controllable GaN Nanostructures

Fabricating 3D Si nanostructure via a novel Ga+ implantation enabled maskless dry etching process

Fabrication of Germanium Tin Microstructures Through Inductively Coupled Plasma Dry Etching

Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes

Electrochemical Lift-off of GaN Films for GaN-on-GaN Technology

Fabrication Of Vertical Position-Controllable Gan Nanowires On (111) Si Substrate

Wafer-scale N-Polar GaN Heterogeneous Structure Fabricated by Surface Active Bonding and Laser Lift-off

Fabrication of High Aspect Ratio Structure and Its Releasing for Silicon on Insulator Mems/Moems Device Application

Fabrication of GaN Nanocolumns with Semipolar Plane Using Ni Nano-Island Masks

A Study Of Gan-Based Led Structure Etching Using Inductively Coupled Plasma

Polymer bonding of GaN crystal layer on silicon substrate for micro mechanical resonator applications

Multi-layer Microstructure Fabrication by Combining Bulk Silicon Micromachining and UV-LIGA Technology

Tuning the interlayer microstructure and residual stress of buffer-free direct bonding GaN/Si heterostructures

Characterization of AlGaN/GaN cantilevers fabricated with deep-release techniques