Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

Fabrication Of Vertical Position-Controllable Gan Nanowires On (111) Si Substrate

Fabrication of Position-controllable GaN Nanostructures

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Fabrication of GaAs Nanowires by Colloidal Lithography and Dry Etching

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Fabrication and Photoluminescence of Ordered GaN Nanowire Arrays

Fabrication of Vertically Aligned Si Nanowires and Their Application in A Gated Field Emission Device

Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

Preparation of Gan Nanowires by Nonammonia Method and Their Photoelectronic Properties

High-yield GaN Nanowire Synthesis and Field-Effect Transistor Fabrication

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Synthesis and Field Emission Studies of Tower-Like GaN Nanowires.

Nanoscale Opening Fabrication on Si (111) Surface from Sio2 Barrier for Vertical Growth of Iii-V Nanowire Arrays

Simple And High-Yield Method For Synthesizing Single-Crystal Gan Nanowires

Fabrication of suspending gan microstructures with combinations of anisotropic and isotropic dry etching techniques

Fabrication of Vertically Stacked Single-Crystalline Si Nanowires Using Self-Limiting Oxidation

High-Quality Ultra-Fine GaN Nanowires Synthesized Via Chemical Vapor Deposition

Phase Transition Induced Vertical Alignment of Ultrathin Gallium Phosphide Nanowire Arrays on Silicon by Chemical Beam Epitaxy

Top-down Fabricated Silicon-Nanowire-based Field-Effect Transistor Device on a (111) Silicon Wafer.

Epitaxial Growth of Vertically Free-Standing Ultra-Thin Silicon Nanowires.

A Selective Etching Route for Large-Scale Fabrication of β-Ga2O3 Micro-/Nanotube Arrays