Abstract:GaAs nanowires (NWs) have been extensively explored for next generation electronics, photonics and photovoltaics due to their direct bandgap and excellent carrier mobility. Typically, these NWs are grown epitaxially on crystalline substrates, which could limit potential applications requiring high growth yield to be printable or transferable on amorphous and flexible substrates. Here, utilizing Ni as a catalytic seed, we successfully demonstrate the synthesis of highly crystalline, stoichiometric and dense GaAs NWs on amorphous SiO(2) substrates. Notably, the NWs are found to grow via the vapor-solid-solid (VSS) mechanism with non-spherical NiGa catalytic tips and low defect densities while exhibiting a narrow distribution of diameter (21.0 ± 3.9 nm) uniformly along the entire length of the NW (>10 µm). The NWs are then configured into field-effect transistors showing impressive electrical characteristics with I(ON)/I(OFF) > 10(3), which further demonstrates the purity and crystal quality of NWs obtained with this simple synthesis technique, compared to the conventional MBE or MOCVD grown GaAs NWs.

Simple And High-Yield Method For Synthesizing Single-Crystal Gan Nanowires

Ultrafast growth of single-crystalline Si nanowires

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Synthesis of Large-Scale Gan Nanowires by Ammoniating Ga2o3/V Films

Preparation of Gan Nanowires by Nonammonia Method and Their Photoelectronic Properties

Synthesis and characterization of high purity GaN nanowires

A Simple Method To Synthesize Nanowires

Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield

Large-scale Crystalline GaN Nanowires Synthesized Through a Chemical Vapor Deposition Method

Synthesis and Characterization of Glomerate GaN Nanowires

High-Quality Gan Nanowires Synthesized Using A Cvd Approach

Synthesis and Characterization of Large-scale Single Crystalline GaN Nanowires Through Ammonification Technique

Fabrication Of Gan Nanowires By Ammoniating Ga2o3/Al2o3 Thin Films Deposited On Si(111) With Radio Frequency Magnetron Sputtering

Synthesis Of Gan Nanowires With Tantalum Catalyst By Magnetron Sputtering

Synthesis of Large-Scale GaN Nanowires by Ammoniating Ga2O3films on Co Layer Deposited on Si(111) Substrates

Facile Synthesis and Growth Mechanism of Ni-catalyzed GaAs Nanowires on Non-Crystalline Substrates

Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition

Two-step synthesis of one-dimensional single crystalline GaN nanowires

Fabrication of needle-shaped GaN nanowires by ammoniating Ga2O3 films on MgO layers deposited on Si (111) substrates

Single-crystalline Wurtzite GaN Nanowires and Zigzagged Nanostructures Fabricated by Sublimation Sandwich Method

Growth of GaN nanowires through a pyrolysis method with vapor–liquid–solid mechanism