Abstract:The identical crystal phase is one of the most critical and challenging subjects in the fabrication of low dimensional III–V semiconductors for electronic and optoelectronic applications. The polytype boundaries induced by the coexistence of wurtzite (WZ) and zinc blende (ZB) phases in the nanowire (NW) limits the device performance. It is interesting to find that the epitaxially grown GaAsSb shell outside the WZ/ZB mixed-phase GaAs NW will induce the complete transformation of WZ segments of GaAs to ZB structures due to the shear tension. The underlying physical mechanism was proposed and verified by first-principle transition barrier calculations and the Shockley partial dislocations theory. Based on the fabricated pure-phase NW, a proof-of-concept high-performance avalanche photodiode was demonstrated, which shows responsivity and a multiplication factor up to 3.3 × 103 A/W and 8.62 × 103 at −11.5 V, respectively. This work promises shear tension as an effective strategy for the controlled syntheses of single-phase semiconductor NWs and other nanostructures.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsphotonics.1c01196.Experimental methods (substrate treatment, NWs growth, material characterizations, detector fabrication, device characterization, and first-principles calculations); the morphology of GaAs NWs, the EDXs, and mapping of GaAs/GaAsSb NW; the Raman and μ-Raman spectra of GaAs and GaAs/GaAsSb NWs; the TEM images of GaAs and GaAs/GaAsSb NWs; the strain of GaAs/GaAsSb core–shell structure (PDF)This article has not yet been cited by other publications.

Fabrication of GaAs Nanowires by Colloidal Lithography and Dry Etching

Fabrication and Photoluminescence of Ordered GaN Nanowire Arrays

Low Reflectance Gaas Nano-Cones Fabricated By Colloidal Lithography For Solar Cells

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Optimization of Anti-Reflective GaAs Nano-Rods on Solar Cells

Fabrication of Conducting Si Nanowire Arrays

Fabrication and Properties of Large-Area Silicon Nanowire Arrays

Wafer-scale high-throughput ordered arrays of Si and Coaxial Si/Si 1- xGex wires: Fabrication, characterization, and photovoltaic application

The Fabrication of MP (M = in and Ga) Nanowires by a New Ullmann Reaction

A route for the top-down fabrication of ordered ultrathin GaN nanowires

Large-scale Fabrication and Luminescence Properties of GaN Nanostructures by a Soft UV-curing Nanoimprint Lithography.

High-yield GaN Nanowire Synthesis and Field-Effect Transistor Fabrication

Fabrication of Highly Ordered InSb Nanowire Arrays by Electrodeposition in Porous Anodic Alumina Membranes

Fabrication Of Vertical Position-Controllable Gan Nanowires On (111) Si Substrate

Fabrication of Silicon Nanowire Arrays with Controlled Diameter, Length, and Density

Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles

Controlled Synthesis of Pure-Phase GaAs Nanowires through Shear Tension

Design and fabrication of wafer-scale highly uniform silicon nanowire arrays by metal-assisted chemical etching for antireflection films

Two-step synthesis of one-dimensional single crystalline GaN nanowires

All Epitaxial Fabrication of a Nanowire Plasmon Laser Structure