Abstract:The synthesis of InP nanofibers via a new Ullmann-type reaction of indium nanoparticles with tri(m-tolyl)phosphine (P(PhMe)(3)) was typically performed to illustrate an alternative route for the preparation of nanostructured metal phosphides, including III-V (13-15) and transition-metal phosphides. Triarlyphosphine compounds such as other two tri(m-tolyl)phosphine isomers, diphenyl(p-tolyl)phosphine, and triphenylphosphine were comparably employed to synthesize InP nanocrystals. From the aspect of the carbonization of triarlyphosphines, Raman spectroscopy and thermo-gravimetric analysis (TGA) investigations of the InP products showed that the stability of these triarlyphosphines conformed to the order of tri(p-tolyl)phosphine approximately tri(o-tolyl)phosphine < diphenyl(p-tolyl)phosphine < tri(m-tolyl)phosphine < triphenylphosphine. The correlation between the stability of triarlyphosphines and the growth of InP nanocrystals was investigated, and experimental results showed that the relatively stable triarlyphosphines (tri(m-tolyl)phosphine and triphenylphosphine) were favorable for the preparation of one-dimensional (1D) InP nanostructures (nanofibers and nanowires). The reactivity (stability) of triarlyphosphines was also compared with those of P(SiMe(3))(3) (typically see: J. M. Nedeljković, O. I. Mićić, S. P. Ahrenkiel, A. Miedaner and A. J. Nozik, J. Am. Chem. Soc., 2004, 126, 2632) and P(C(8)H(17))(3) (C. Qian, F. Kim, L. Ma, F. Tsui, P. D. Yang and J. Liu, J. Am. Chem. Soc., 2004, 126, 1195) according to the difference in preparative temperature for phosphide synthesis. Raman and photoluminescence properties of the as-synthesized InP nanocrystals were further studied, and the synthetic mechanism of our method was reasonably investigated by GC-MS analysis. Moreover, the current route was successfully extended to prepare GaP, MnP, CoP and Pd(5)P(2) nanocrystals.

The Fabrication of MP (M = in and Ga) Nanowires by a New Ullmann Reaction

Fabrication of GaAs Nanowires by Colloidal Lithography and Dry Etching

Fabrication and Photoluminescence of Ordered GaN Nanowire Arrays

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Synthesis of Inp Nanofibers from Tri(M-Tolyl)Phosphine: an Alternative Route to Metal Phosphide Nanostructures

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Alternate InP Synthesis with Aminophosphines: Solution-Liquid-Solid Nanowire Growth

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Aqueous‐Solution Growth of GaP and InP Nanowires: A General Route to Phosphide, Oxide, Sulfide and Tungstate Nanowires.

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Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

Synthesis and Microstructure of Gallium Phosphide Nanowires

Preparation, characterization and formation mechanism of gallium oxide nanowires

Straight and Helical InGaN Core–shell Nanowires with a High in Core Content

Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires.

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Two-step synthesis of one-dimensional single crystalline GaN nanowires

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Characteristics and Fabrications of InN Nanowire Material

Large-scale synthesis of in2O3 nanowires and their characterization

Large-scale Synthesis of in 2 O 3 Nanowires