Abstract:GaN/AlGaN core-shell nanowires with various Al compositions have been grown on GaN nanowire array using selective area metal organic chemical vapor deposition technique. Growth of the AlGaN shell using pure N2 carrier gas resulted in a smooth surface for the nonpolar m-plane sidewalls with superior optical properties, whereas, growth using a mixed N2/H2 carrier gas resulted in a striated surface similar to the commonly observed morphology in the growth of nonpolar III-nitrides. The Al compositions in the AlGaN shells are found to be less than the gas phase input ratio. The systematic reduction in efficiency of Al incorporation in the AlGaN shells with increasing the Al molar flow in the gas phase is attributed to geometric loss, strain-limited Al incorporation, and increased gas phase parasitic reactions. Defect-related luminescence has been observed for AlGaN shells with Al content ≥ 30% and the origin of the defect luminescence has been determined as the (VIII-2ON)1- complex. Microstructural analysis of the AlGaN shells revealed that the dominant defects are partial dislocations. Growth of the nonpolar m-plane AlxGa1-xN/AlyGa1-yN quantum wells on the sidewalls of the GaN nanowires produced arrays with excellent morphology and optical emission, which demonstrated the viability of such a growth scheme for large area efficient ultraviolet LEDs as well as for next generation ultraviolet micro-LEDs.

Straight and Helical InGaN Core–shell Nanowires with a High in Core Content

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Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Compositional Varied Core-Shell InGaP Nanowires Grown by Metal-Organic Chemical Vapor Deposition.

3D Atomic-Scale Insights into Anisotropic Core-Shell-Structured InGaAs Nanowires Grown by Metal-Organic Chemical Vapor Deposition.

Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

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Bending and reverse bending during the fabrication of novel GaAs/(In,Ga)As/GaAs core-shell nanowires monitored by in situ X-ray diffraction

Simulation of self-assembled compositional core-shell structures in In x Ga 1 − x N nanowires

Spontaneous formation of well-defined Al rich shell structures in AlxGa1-xN/GaN nanowires

Core-shell GaN/AlGaN nanowires grown by selective area epitaxy

AlxGa1-xN -Gan Core-Shell Nanorods: Synthesis and Field Emission Properties

Instantaneous growth of single monolayers as the origin of spontaneous core-shell InxGa1-xN nanowires with bright red photoluminescence

One step growth of GaN/SiO2 core/shell nanowire in vapor-liquid-solid route by chemical vapor deposition technique

Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range

Structural, Electronic and Magnetic Properties of GaN Nanotubes Filled with Nickel Nanowires

Structural and Optical Characterization of Vertical GaAs/GaP Core-Shell Nanowires Grown on Si Substrates