Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

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GaN Nanopillars with a Nickel Nano-Island Mask

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Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Fabrication of GaAs Nanowires by Colloidal Lithography and Dry Etching

Coordinated Stress Management and Dislocation Control in GaN Growth on Si (111) Substrates by Using a Carbon Nanotube Mask.

Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.

InGaN Nanocolumn Growth Self-Induced by In-Situ Annealing and Ion Irradiation During Growth Process with Molecular Beam Epitaxy Method

Fabrication of Position-controllable GaN Nanostructures

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Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

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In Situ Site-Specific Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar (112̅2) GaN

Nano-fabrication and Related Optical Properties of InGaN/GaN Nanopillars.

Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

A strategy to grow three dimensional InGaN/GaN heterostructure exclusively on non-polar m-plane of two-step etched GaN nanorods

Formation of Nanorod InGaN/GaN Multiple Quantum Wells Using Nickel Nano-Masks and Dry Etching for InGaN-based Light-Emitting Diodes

Fabricating 3D Si nanostructure via a novel Ga+ implantation enabled maskless dry etching process

Fabrication of suspending gan microstructures with combinations of anisotropic and isotropic dry etching techniques