Abstract:This report focuses on the fabrication of multi‐layer nanopillar arrays using nanoimprint lithography and plasma etching. Then, freestanding μLEDs with smooth surfaces are successfully formed on nanopillar arrays by following a bottom‐up approach using metal–organic vapor phase epitaxy (MOVPE). These μLEDs are easily transferred onto a silicon substrate by combining adhesive tape and metal–metal bonding steps. The mass production of μLEDs requires an upscaling approach on 200 mm wafers, which implies the deployment of a technology that achieves zero defectivity without liftoff. In this report, Nanoimprint lithography (NIL) processing is successfully optimized for nanostructuring GaN‐based Silicon‐On‐Insulator (SOI) substrates. The etching of SiO2/GaN/AlN/Si/SiO2 layers using different plasmas is conducted and multi‐layer nanopillars 100–200 mm in diameter are fabricated. This approach generates zero‐defect arrays of pillars, which is particularly advantageous for the growth process. In addition, the SiO2 at the bottom of the pillar allows it to twist during the subsequent GaN regrowth, as this layer becomes soft at the growth temperature >1000 °C. This ability to deform enables a coalescence of pillars into layers with reduced dislocation density. As a result, high‐quality GaN microplatelets and μLEDs are grown via a bottom‐up approach based on pendeoepitaxy using metal–organic vapor phase epitaxy (MOVPE). The fabricated μLEDs have a very smooth surface with a roughness of 0.6 nm which facilitated the implementation of an easy and simple transfer protocol. Adhesive tape and metalmetal bonding, are used to bond the μLEDs onto a metal‐coated silicon substrate. The reported findings offer exciting new insights into the development of high‐performance displays.

GaN Nanopillars with a Nickel Nano-Island Mask

Arrays of GaN nano-pillars fabricated by nickel nano-island mask

High Optical Quality GaN Nanopillar Arrays

Fabrication of GaN Nanocolumns with Semipolar Plane Using Ni Nano-Island Masks

Optical Device Based on a Nanopillar Array by the Pattern Transfer of an Anodic Aluminum Oxide Membrane

Fabrication and Optical Characterization of Gan-Based Nanopillar Light Emitting Diodes

Fabrication and Improvement of Nanopillar InGaN / GaN Light-Emitting Diodes Using Nanosphere Lithography

Nano-fabrication and Related Optical Properties of InGaN/GaN Nanopillars.

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Formation of Nanorod InGaN/GaN Multiple Quantum Wells Using Nickel Nano-Masks and Dry Etching for InGaN-based Light-Emitting Diodes

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

High-output power GaN-LED based on surface plasmon enhancement

Development of Nanopillar Arrays Nanopatterning Without Lift‐Off for Transferable GaN‐Based μLEDs

Density control of GaN nanowires at the wafer scale using self-assembled SiN$_x$ patches on sputtered TiN(111)

Single Crystalline InGaAs Nanopillar Grown on Polysilicon with Dimensions beyond Substrate Grain Size Limit

Ingan Nanorings And Nanodots By Selective Area Epitaxy

Preparation of Silicon Nanopillars Array Using Gold Nanoparticles As Etching Mask

Cost-effective Selective-Area Growth of GaN-based Nanocolumns on Silicon Substrates by Molecular-Beam Epitaxy

Wafer-scale Heteroepitaxy GaN Film Free of High-Density Dislocation Region with Hexagonal 3D Serpentine Mask

FEASIBLE METHOD TO FABRICATE A NICKEL-NANODOT MASK ON A SILICON SUBSTRATE WITH CONVENTIONAL THERMAL ANNEALING

Light extraction enhancement of light-emitting diodes by nanopillar hierarchical structures