Abstract:Numerous efforts have been devoted to improve the electronic and optical properties of III-V compound materials via reduction of their nonradiative states, aiming at highly-efficient III-V sub-micrometer devices. Despite many advances, there is still a controversial debate on which combination of chemical treatment and capping dielectric layer can best reproducibly protect the crystal surface of III-Vs, while being compatible with readily available plasma deposition methods. This work reports on a systematic experimental study on the role of sulfide ammonium chemical treatment followed by dielectric coating in the passivation effect of GaAs/AlGaAs nanopillars. Our results conclusively show that the best surface passivation is achieved using ammonium sulfide followed by encapsulation with a thin layer of silicon nitride by low frequency plasma enhanced chemical deposition. Here, the sulfurized GaAs surfaces, the high level of hydrogen ions and the low frequency (380 kHz) excitation plasma that enable intense bombardment of hydrogen, all seem to provide a combined active role in the passivation mechanism of the pillars. We observe up to a 29-fold increase of the photoluminescence (PL) integrated intensity for the best samples as compared to untreated nanopillars. X-ray photoelectron spectroscopy analysis confirms the best treatments show remarkable removal of gallium and arsenic native oxides. Time-resolved micro-PL measurements display nanosecond lifetimes resulting in a record-low surface recombination velocity for dry etched GaAs nanopillars. We achieve robust, stable and long-term passivated nanopillar surfaces which creates expectations for remarkable high internal quantum efficiency (IQE>0.5) in nanoscale light-emitting diodes. The enhanced performance paves the way to many other nanostructures and devices such as miniature resonators, lasers, photodetectors and solar cells.

Arrays of GaN nano-pillars fabricated by nickel nano-island mask

GaN Nanopillars with a Nickel Nano-Island Mask

Fabrication of GaN Nanocolumns with Semipolar Plane Using Ni Nano-Island Masks

High Optical Quality GaN Nanopillar Arrays

Nano-fabrication and Related Optical Properties of InGaN/GaN Nanopillars.

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Fabrication and Optical Characterization of Gan-Based Nanopillar Light Emitting Diodes

Fabrication and Photoluminescence of Ordered GaN Nanowire Arrays

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates

Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts

Formation of Nanorod InGaN/GaN Multiple Quantum Wells Using Nickel Nano-Masks and Dry Etching for InGaN-based Light-Emitting Diodes

Fabrication and Improvement of Nanopillar InGaN / GaN Light-Emitting Diodes Using Nanosphere Lithography

A Selective Etching Route for Large-Scale Fabrication of β-Ga2O3 Micro-/Nanotube Arrays

InGaN Nanocolumn Growth Self-Induced by In-Situ Annealing and Ion Irradiation During Growth Process with Molecular Beam Epitaxy Method

A practical route towards fabricating GaN nanowire arrays

FEASIBLE METHOD TO FABRICATE A NICKEL-NANODOT MASK ON A SILICON SUBSTRATE WITH CONVENTIONAL THERMAL ANNEALING

Optical Properties of Nano-Fabricated InGaN/GaN Pillars

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices

Wafer-scale Heteroepitaxy GaN Film Free of High-Density Dislocation Region with Hexagonal 3D Serpentine Mask