Optical Properties of Nano-Fabricated InGaN/GaN Pillars

yulong hu,zhibiao hao,yi luo,lai wang,qingfeng yan

DOI: https://doi.org/10.1364/ACPC.2014.ATh1J.4

2014-01-01

Abstract:InGaN/GaN nanopillars are fabricated by nanosphere lithography method. The TDPL measurement and simulation results reveal that both strain relaxation and quantum confinement induce the blue shift of the PL peak wavelength of the nanopillars.

What problem does this paper attempt to address?

Nano-fabrication and Related Optical Properties of InGaN/GaN Nanopillars.

Yulong Hu,Zhibiao Hao,Wang Lai,Chong Geng,Yi Luo,Qingfeng Yan

DOI: https://doi.org/10.1088/0957-4484/26/7/075302

IF: 3.5

2015-01-01

Nanotechnology

Abstract:Nanopillars with diameters down to 20 nm were fabricated from InGaN/GaN multiple quantum wells (MQWs) by using a nanosphere–SiO2 double mask and inductively coupled plasma (ICP) etching. Clear photoluminescence (PL) signals of the nanopillars were observed at room temperature, and the PL peak energy at 20 K showed a large blueshift of 220 meV compared with that of the original MQWs. The exciton activation energy in the temperature range of 100 ∼ 300 K increased from 33 meV for MQWs to 83 meV for nanopillars. According to the measurements and numerical simulation results, the strain relaxation effect is believed to play a dominant role rather than the quantum confinement effect in determining the emission wavelength of nanopillars. This work also demonstrates a promising method for obtaining III-nitride quantum dots.
Fabrication of Submicrometer Inp Pillars by Colloidal Lithography and Dry Etching

Ming-Yu Li,Shagufta Naureen,Naeem Shahid,Srinivasan Anand

DOI: https://doi.org/10.1149/1.3464764

IF: 3.9

2010-01-01

Journal of The Electrochemical Society

Abstract:A simple method for the fabrication of submicrometer InP pillars with large surface area coverage has been developed based on a combination of colloidal lithography and inductively coupled plasma (ICP) etching technique using Cl(2)/H(2)/CH(4)/Ar chemistry. Pillars with different sizes could be fabricated by using colloidal SiO(2) particles with different sizes dispersed on the sample serving as masks. Pillars with lateral diameters as small as 60 nm and aspect ratios as high as 10: 1 have been obtained. The effects of etch parameters such as radio-frequency power, ICP power, and etching time on pillar fabrication are investigated. By a suitable choice of etch parameters and utilizing erosion of colloidal (mask) SiO(2) particle during etching, the height of the pillars as well as their shape can be modified from nearly cylindrical to conical shapes. Such a control on the shape of the structures in addition to the large surface coverage could be useful for applications in photovoltaics and for the fabrication of photonic crystals. For instance, continuous grading of the refractive index can be obtained for surfaces covered with conical pillars, which can be used as antireflecting surfaces in solar cells or for light extraction in light emitting diodes. (C) 2010 The Electrochemical Society. [DOI:10.1149/1.3464764] All rights reserved.
Strain Relaxation In Ingan/Gan Micro-Pillars Evidenced By High Resolution Cathodoluminescence Hyperspectral Imaging

Enyuan Xie,Zhizhong Chen,Paul R. Edwards,Zheng Gong,Ningyang Liu,Yuebin Tao,Yanfeng Zhang,Yu Chen,Ian M. Watson,Erdan Gu,Robert W. Martín,Guoyi Zhang,Martin D. Dawson

DOI: https://doi.org/10.1063/1.4733335

IF: 2.877

2012-01-01

Journal of Applied Physics

Abstract:A size-dependent strain relaxation and its effects on the optical properties of InGaN/GaN multiple quantum wells (QWs) in micro-pillars have been investigated through a combination of high spatial resolution cathodoluminescence (CL) hyperspectral imaging and numerical modeling. The pillars have diameters (d) ranging from 2 to 150 mu m and were fabricated from a III-nitride light-emitting diode (LED) structure optimized for yellow-green emission at similar to 560 nm. The CL mapping enables us to investigate strain relaxation in these pillars on a sub-micron scale and to confirm for the first time that a narrow (similar to 2 mu m) edge blue-shift occurs even for the large InGaN/GaN pillars (d > 10 mu m). The observed maximum blue-shift at the pillar edge exceeds 7nm with respect to the pillar centre for the pillars with diameters in the 2-16 mu m range. For the smallest pillar (d = 2 mu m), the total blue-shift at the edge is 17.5 nm including an 8.2 nm "global" blue-shift at the pillar centre in comparison with the unetched wafer. By using a finite element method with a boundary condition taking account of a strained GaN buffer layer which was neglected in previous simulation works, the strain distribution in the QWs of these pillars was simulated as a function of pillar diameter. The blue-shift in the QWs emission wavelength was then calculated from the strain-dependent changes in piezoelectric field, and the consequent modification of transition energy in the QWs. The simulation and experimental results agree well, confirming the necessity for considering the strained buffer layer in the strain simulation. These results provide not only significant insights into the mechanism of strain relaxation in these micro-pillars but also practical guidance for design of micro/nano LEDs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733335]
Fabrication and Improvement of Nanopillar InGaN / GaN Light-Emitting Diodes Using Nanosphere Lithography

Ahmed Fadil,Yiyu Ou,Teng Zhan,Kaiyu Wu,Dmitry Suyatin,Weifang Lu,Paul Michael Petersen,Zhiqiang Liu,Haiyan Ou

DOI: https://doi.org/10.1117/1.jnp.9.093062

IF: 1.179

2015-01-01

Journal of Nanophotonics

Abstract:Surface-patterning technologies have enabled the improvement of currently existing light-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency of green GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars on InGaN/GaN quantum-well LEDs. By etching through the active region, it is possible to improve both the light extraction efficiency and, in addition, the internal quantum efficiency through the effects of lattice strain relaxation. Nanopillars of different sizes are fabricated and analyzed using Raman spectroscopy. We have shown that nanopillar LEDs can be significantly improved by applying a combination of ion-damage curing techniques, including thermal and acidic treatment, and have analyzed their effects using x-ray photoelectron spectroscopy. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Optical Properties of Nanopillar AlGaN/GaN MQWs for Ultraviolet Light-Emitting Diodes.

Peng Dong,Jianchang Yan,Yun Zhang,Junxi Wang,Chong Geng,Haiyang Zheng,Xuecheng Wei,Qingfeng Yan,Jinmin Li

DOI: https://doi.org/10.1364/oe.22.00a320

IF: 3.8

2014-01-01

Optics Express

Abstract:Nanopillar AlGaN/GaN multiple quantum wells ultraviolet light-emitting diodes (LEDs) were fabricated by nanosphere lithography and dry-etching. The optical properties of the nanopillar LEDs were characterized by both temperature-dependent and time-resolved photoluminescence measurements. Compared to an as-grown sample, the nanopillar sample has a PL emission peak blue-shift of 7 meV, a 42% enhanced internal quantum efficiency at room temperature and a reduced radiative recombination lifetime from 870 picosecond to 621 picosecond at 7K. These results are directly from the suppressed quantum confined stark effect that is due to the strain relaxation in the nanopillar MQWs, further revealed by micro-Raman measurement. Additionally, finite-difference time domain simulation also proves better light extraction efficiency in the nanopillar LEDs.
Fabrication and Optical Characterization of Gan-Based Nanopillar Light Emitting Diodes

Jihong Zhu,Liangji Wang,Shuming Zhang,Hui Wang,Degang Zhao,Jianjun Zhu,Zongshun Liu,Desheng Jiang,Hui Yang

DOI: https://doi.org/10.1063/1.3488905

2008-01-01

Chinese Physics Letters

Abstract:InGaN/GaN-multiple-quantum-well-based light emitting diode ( LED) nanopillar arrays with a diameter of approximately 200nm and a height of 700nm are fabricated by inductively coupled plasma etching using Ni self-assembled nanodots as etching mask. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence ( PL) intensity is achieved after the fabrication of nanopillars, and a blue shift and a decrease of full width at half maximum of the PL peak are observed. The method of additional wet etching with different chemical solutions is used to remove the etch-induced damage. The result shows that the dilute HCl ( HCl:H2O=1:1) treatment is the most effective. The PL intensity of nanopillar LEDs after such a treatment is about 3.5 times stronger than that before treatment.
The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers

J H Zhu,L J Wang,S M Zhang,H Wang,D G Zhao,J J Zhu,Z S Liu,D S Jiang,Y X Qiu,H Yang

DOI: https://doi.org/10.1088/0022-3727/42/23/235104

2009-01-01

Abstract:Two emission peaks were observed in the low temperature photoluminescence (LTPL) spectra of an InGaN/GaN multiple quantum well (MQW) structure before and after nanopillar fabrication. After nanopillar fabrication it is found that among the two peaks the longer wavelength peak exhibits a clear blue shift and has a much stronger enhancement in LTPL intensity than the shorter one. Combined with x-ray diffraction and spatially resolved cathodoluminescence analyses, the difference induced by nanopillar fabrication is ascribed to different strain relaxation states in the lower and upper quantum well layers. It is found that the lower QW layers of the as-grown MQW which causes the longer wavelength PL peak are more strained, while the upper ones are almost fully strain-relaxed. Therefore, the nanopillar fabrication induces much less strain relaxation in the upper part of the MQW than in the lower one.
Light Extraction Efficiency Improvement and Strain Relaxation in InGaN/GaN Multiple Quantum Well Nanopillars

Jihong Zhu,Liangji Wang,Shuming Zhang,Hui Wang,Degang Zhao,Jianjun Zhu,Zongshun Liu,Desheng Jiang,Hui Yang

DOI: https://doi.org/10.1063/1.3580477

IF: 2.877

2011-01-01

Journal of Applied Physics

Abstract:Light extraction efficiency improvement and strain relaxation were observed in InGaN/GaN multiple quantum well (MQW) nanopillars. InGaN/GaN MQW-based LED nanopillar arrays with different diameters varying from about 120 to 250 nm were fabricated via inductively coupled plasma etching using Ni self-assembled nanodots as etching mask. The ray trace method and TiberCAD were used to calculate the light extraction efficiency and strain relaxation in the nanopillars. Remarkably improved light extraction efficiency and strain relaxation were obtained from the calculation results in the nanopillar structures.
High Optical Quality GaN Nanopillar Arrays

YD Wang,SJ Chua,S Tripathy,MS Sander,P Chen,CG Fonstad

DOI: https://doi.org/10.1063/1.1861984

IF: 4

2005-01-01

Applied Physics Letters

Abstract:GaN nanopillar arrays have been fabricated by inductively coupled plasma etching of GaN films using anodic aluminum oxide film as an etch mask. The average diameter and length of these pillars are 60–65nm and 350–400nm, respectively. Ultraviolet microphotoluminescence measurements indicate high photoluminescence intensity and stress relaxation in these GaN nanopillars as compared to the starting epitaxial GaN films. Evidence of good crystalline quality is also observed by micro-Raman measurements, wherein a redshift of the E2high mode from GaN nanopillars suggests partial relaxation of the compressive strain. In addition, breakdown of the polarization selection rules led to the appearance of symmetry-forbidden and quasipolar modes.
Surface-Induced Carrier Localization and Recombination Characteristics in InGaN/GaN Quantum Dots in Nanopillars

Z. L. Wang,Z. B. Hao,J. D. Yu,L. Wang,J. Wang,C. Z. Sun,B. Xiong,Y. J. Han,H. T. Li,Y. Luo

DOI: https://doi.org/10.1021/acs.jpcc.8b11830

2019-01-01

Abstract:In quantum structures and nanomaterials, surface conditions have significant influence on the material's optical and electrical properties; hence, surface modification is an inevitable and critical step during the fabrication process of optoelectronic devices. A comprehensive understanding on how surface conditions impact on the performance is a key issue; however, it is difficult to apply experimental techniques to study the surface physics in the atomic scale. In this paper, the photoluminescence properties of InGaN/GaN quantum dots in nanopillar samples were carefully investigated and compared after applying various surface manipulation techniques. Spectroscopic results show that the localization features including recombination energy level and peak shift with temperature are extremely sensitive to surface treatment. Based on the localized state ensemble model, a quantitative analysis is performed taking into account of thermal activation and density of states distribution function of localization. The correlation between optical properties and the physical mechanism of surface modification is established. This spectroscopic technique along with the analytical method provides physical insights and reliable basis for nanoscale device evaluation and optimization.
Temperature-Dependent Photoluminescence from GaN/Si Nanoporous Pillar Array

Li Yong,Wang Xiao-Bo,Fan Zhi-Qiang,Li Xin-Jian

DOI: https://doi.org/10.1088/0256-307x/31/4/047801

2015-01-01

Chinese Physics Letters

Abstract:A GaN/Si nanoheterostructure is prepared by growing wurtzite GaN on a silicon nanoporous pillar array (Si-NPA) with a chemical vapor deposition method. The temperature evolution of the photoluminescence (PL) of GaN/Si-NPA is measured and the PL mechanism is analyzed. It is found that the PL spectrum is basically composed of two narrow ultraviolet peaks and a broad blue peak, corresponding to the near band edge emission of GaN and its phonon replicas, and the emission from Si-NPA. No GaN defect-related PL is observed in the as-prepared GaN/Si-NPA. Our experiments prove that Si-NPA might be an ideal substrate for preparing high-quality Si-based GaN nanomaterials or nanodevices.
Raman And Photoluminescence Characterization Of Focused Ion Beam Patterned Ingan/Gan Multi-Quantum-Wells Nanopillar Array

x h wang,j q ning,s j xu,h w choi

DOI: https://doi.org/10.1063/1.3658866

IF: 2.877

2011-01-01

Journal of Applied Physics

Abstract:High crystal quality GaN nanopillar arrays containing InGaN/GaN multi-quantum wells (MQWs) have been fabricated by focused ion beam followed by wet etch treatments to remove the ion damage. The first order Raman spectra reveal a well-built additional peak when the diameter of the nanopillars is less than 220 nm. This peak is also observed in the GaN pillars without MQW and is clearly assigned to the surface optical (SO) mode originating from the A(1) phonon in wurtzite GaN. The frequency of this SO mode is found to be sensitive with the diameter and surface roughness of the nanopillars. Temperature-variable photoluminescence measurements show that a broadband emission in the as-grown sample split into the two well-resolved bands for nanopillars and the emission band at the higher energy side quickly thermally quenched. (C ) 2011 American Institute of Physics. [doi:10.1063/1.3658866]
Large-scale Fabrication and Luminescence Properties of GaN Nanostructures by a Soft UV-curing Nanoimprint Lithography.

Zhe Zhuang,Xu Guo,Guogang Zhang,Bin Liu,Rong Zhang,Ting Zhi,Tao,Haixiong Ge,Fangfang Ren,Zili Xie,Youdou Zheng

DOI: https://doi.org/10.1088/0957-4484/24/40/405303

IF: 3.5

2013-01-01

Nanotechnology

Abstract:GaN nanorods with a period of 400 nm and diameter of 200 nm, and nano-gratings with a period of 400 nm and gap width of 100 nm are fabricated on wafers by a soft UV-curing nanoimprint lithography. These nanostructures show high periodicity and good morphology. The photoluminescence (PL) spectra exhibit that the integral PL intensity of GaN nanorods is enhanced as much as 2.5 times, compared to that of as-grown GaN films. According to finite-difference time-domain simulations and cathodoluminescence mappings, it is concluded that the enhancement for nanorods is due to the improvements of both spontaneous emission rate and light extraction efficiency caused by periodic GaN structures on the surface. By identifying the Raman shift of E1(TO) and E2(H) modes of GaN films with nano-gratings and nanorods, the normal-plane strain ε(zz) is determined. The PL emission energy is found to be proportional to the ε(zz), whose linear proportionality factor is calculated to be -27 meV GPa(-1).
Surface optical phonon modes in ternary aligned crystalline InGaN-GaN multi-quantum well nanopillar arrays

S.-E. Wu,S. Dhara,T.-H. Hsueh,Y.-F. Lai,C.-Y. Wang,C.-P. Liu

DOI: https://doi.org/10.1002/jrs.2369

2009-05-02

Abstract:The optical properties of focused ion beam-engraved perfectly aligned and spatially controlled multi-quantum-well InGaN-GaN nanopillars were investigated. Crystalline MQW nanopillars with a diameter of 30 to 95 nm and high aspect ratios showed a maximum of three-fold enhancement in emission intensity per unit active area. A light emitting contour map of Taiwan is drawn with a nanopillar structure to demonstrate the site control of the technique adopted in the present study. Raman scattering studies were used to characterize the newly created surfaces. Unknown peaks in GaN and InGaN nanostructures are identified for surface optical (SO) phonon modes with proper assignments of wave vectors using multiple excitations, and the SO mode for the ternary phase is reported for the first time.

Materials Science
Size-dependent Optical Properties of InGaN Quantum Dots in GaN Nanowires Grown by MBE

Yanxiong E,Zhibiao Hao,Jiadong Yu,Chao Wu,Lai Wang,Bing Xiong,Jian Wang,Yanjun Han,Changzheng Sun,Yi Luo

DOI: https://doi.org/10.1007/s12200-016-0613-4

2016-01-01

Frontiers of Optoelectronics

Abstract:Quantum dots in nanowires (DINWs) are considered as important building blocks for novel nanoscale semiconductor optoelectronic devices. In this paper, pure axial heterojunction InGaN/GaN DINWs are grown by using plasma-assisted molecular beam epitaxy (PA-MBE) system. The InGaN quantum dots (QDs) are disk-like observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The diameter of QDs can be controlled by the growth conditions of nanowires (NWs), while the thickness of QDs can be controlled by the growth time of InGaN. Temperature-dependent photoluminescence (TDPL) measurements demonstrate that the PL peak of DINWs with small and uniform sizes shows a general red shift with increasing temperature. However, the PL peak of DINWs with non-uniform sizes shows an abnormal blue shift with increasing temperature, which is due to different internal quantum efficiencies of the DINWs with different sizes.
Optical Polarization Characteristics of C-Plane InGaN/GaN Asymmetric Nanostructures

Zhe Zhuang,Yi Li,Bin Liu,Xu Guo,Jiangping Dai,Guogang Zhang,Tao,Ting Zhi,Zili Xie,Haixiong Ge,Yi Shi,Youdou Zheng,Rong Zhang

DOI: https://doi.org/10.1063/1.4938119

IF: 2.877

2015-01-01

Journal of Applied Physics

Abstract:Highly ordered c-plane InGaN/GaN elliptic nanorod (NR) and nano-grating (NG) arrays were fabricated by our developed soft UV-curing nanoimprint lithography on a wafer. The polarized photoluminescence emission from these elliptic NR and NG arrays has been investigated both theoretically and experimentally. Considerable in-plane optical anisotropy, with a polarization ratio of 15% and 71% and a peak shift of 5.2 meV and 28.1 meV, was discovered from these c-plane InGaN/GaN elliptic NR and NG arrays, respectively. The k·p perturbation theory was adopted to explore this situation, simulating the transitions from conduction subbands to valence subbands and their corresponding optical momentum matrix elements at/around Γ point under the in-plane asymmetric strain. The good agreements of observed and simulated results demonstrate that the in-plane strain asymmetry is the essential cause of the optical polarization in this case, revealing the great potential to utilize strain effect to control the polarization of InGaN/GaN nanostructures.
Nanoscale Optical Properties of Indium Gallium Nitride/Gallium Nitride Nanodisk-In-Rod Heterostructures

Xiang Zhou,Ming-Yen Lu,Yu-Jung Lu,Eric J. Jones,Shangjr Gwo,Silvija Gradecak

DOI: https://doi.org/10.1021/nn506867b

IF: 17.1

2015-01-01

ACS Nano

Abstract:III-nitride based nanorods and nanowires offer great potential for optoelectronic applications such as light emitting diodes or nanolasers. We report nanoscale optical studies of InGaN/GaN nanodisk-in-rod heterostructures to quantify uniformity of light emission on the ensemble level, as well as the emission characteristics from individual InGaN nanodisks. Despite the high overall luminescence efficiency, spectral and intensity inhomogeneities were observed and directly correlated to the compositional variations among nanodisks and to the presence of structural defect, respectively. Observed light quenching is correlated to type I1 stacking faults in InGaN nanodisks, and the mechanisms for stacking fault induced nonradiative recombinations are discussed in the context of band structure around stacking faults and Fermi level pinning at nanorod surfaces. Our results highlight the importance of controlling III-nitride nanostructure growths to further reduce defect formation and ensure compositional homogeneity for optoelectronic devices with high efficiencies and desirable spectrum response.
Arrays of GaN nano-pillars fabricated by nickel nano-island mask

Zengqin Lin,Xiangqian Xiu,Shiying Zhang,Xuemei Hua,Zili Xie,Rong Zhang,Ping Han,Youdou Zheng

DOI: https://doi.org/10.1016/j.matlet.2013.07.005

IF: 3

2013-01-01

Materials Letters

Abstract:Uniformly distributed GaN nano-pillars have been successfully fabricated by inductively coupled plasma etching using self-organized Nickel nano-islands mask on GaN film. Ni nano-islands have been formed through the annealing under the ammonia. The size and distribution of GaN nano-pillars can be controlled by the thickness of Ni film and the NH3 annealing time. The optimum diameter and the density of GaN pillars by analyzing the top-view SEM images are about 350nm and 2.6×108cm−2, respectively. The photoluminescence (PL) measurements showed the improved optical properties and the strain relaxation in GaN nano-pillars compared to the bulk materials.
High Quality Ingap Micropillars Directly Grown On Silicon

Hao Sun,Fan Ren,Thai Truong D Tran,Karwei Ng,Kun Li,Connie J. Chang-Hasnain

DOI: https://doi.org/10.1109/PHOSST.2013.6614534

2013-01-01

Abstract:High quality lattice-mismatched micron-sized InGaP pillars directly grown on silicon are studied using time-resolved photoluminescence. Micropillars with single-crystalline wurtzite phase exhibit bright photoluminescence and very long lifetimes, promising for optoelectronic devices and solar cell applications.
Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure

ZHI Ting,TAO Tao,LIU Bin,ZHUANG Zhe,XIE Zi-li,CHEN Peng,ZHANG Rong,ZHENG You-dou

DOI: https://doi.org/10.3788/fgxb20163712.1538

2016-01-01

Abstract:In order to improve the emission efficiency of light-emitting diodes, reduce the quantum-confined Stark effect induced by stain, and increase the wave function overlap of electron and holes, InGaN/GaN based LEDs with array nanorods structure were fabricated by utilization of nanoimprint lithography ( NIL) and nano-fabrication processes. It demonstrates the uniform and bight emission, lower leakage current ( ~10 -7 ) , optimized turn on voltage ( ~3 V) . The uniform electrolumines-cence ( EL) of InGaN/GaN MQW NR arrays has been successfully achieved as well, with a slight blue shift compared to that of the planar devices due to the lower quantum-confined Stark effect. It is confirmed that the defects and dislocations density is lower, strain accumulated in the film is released, quantum-confined Stark effect is reduced( relaxed degree~70%) , and the wave function overlap of electron and holes is increased and light extraction efficiency is improved.

Optical Properties of Nano-Fabricated InGaN/GaN Pillars

Nano-fabrication and Related Optical Properties of InGaN/GaN Nanopillars.

Fabrication of Submicrometer Inp Pillars by Colloidal Lithography and Dry Etching

Strain Relaxation In Ingan/Gan Micro-Pillars Evidenced By High Resolution Cathodoluminescence Hyperspectral Imaging

Fabrication and Improvement of Nanopillar InGaN / GaN Light-Emitting Diodes Using Nanosphere Lithography

Optical Properties of Nanopillar AlGaN/GaN MQWs for Ultraviolet Light-Emitting Diodes.

Fabrication and Optical Characterization of Gan-Based Nanopillar Light Emitting Diodes

The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers

Light Extraction Efficiency Improvement and Strain Relaxation in InGaN/GaN Multiple Quantum Well Nanopillars

High Optical Quality GaN Nanopillar Arrays

Surface-Induced Carrier Localization and Recombination Characteristics in InGaN/GaN Quantum Dots in Nanopillars

Temperature-Dependent Photoluminescence from GaN/Si Nanoporous Pillar Array

Raman And Photoluminescence Characterization Of Focused Ion Beam Patterned Ingan/Gan Multi-Quantum-Wells Nanopillar Array

Large-scale Fabrication and Luminescence Properties of GaN Nanostructures by a Soft UV-curing Nanoimprint Lithography.

Surface optical phonon modes in ternary aligned crystalline InGaN-GaN multi-quantum well nanopillar arrays

Size-dependent Optical Properties of InGaN Quantum Dots in GaN Nanowires Grown by MBE

Optical Polarization Characteristics of C-Plane InGaN/GaN Asymmetric Nanostructures

Nanoscale Optical Properties of Indium Gallium Nitride/Gallium Nitride Nanodisk-In-Rod Heterostructures

Arrays of GaN nano-pillars fabricated by nickel nano-island mask

High Quality Ingap Micropillars Directly Grown On Silicon

Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure