Abstract:The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes (LEDs) have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi-quantum well (MQW) LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence (PL) spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows: 1) the improvement in crystal quality, namely the reduction in V-defects; 2) the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3) the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.

Raman And Photoluminescence Characterization Of Focused Ion Beam Patterned Ingan/Gan Multi-Quantum-Wells Nanopillar Array

Surface optical phonon modes in ternary aligned crystalline InGaN-GaN multi-quantum well nanopillar arrays

Nano-fabrication and Related Optical Properties of InGaN/GaN Nanopillars.

Characteristics of Nanoporous Ingan/Gan Multiple Quantum Wells

High Optical Quality GaN Nanopillar Arrays

Localized Surface Optical Phonon Mode in the InGaN/GaN Multiple-Quantum- Wells Nanopillars: Raman Spectrum and Imaging

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

Temperature-Dependent Photoluminescence from GaN/Si Nanoporous Pillar Array

Anticrossing of Axial and Planar Surface-Related Phonon Modes in Raman Spectra of Self-Assembled Gan Nanowires

Strong potential profile fluctuations and effective localization process in InGaN∕GaN multiple quantum wells grown on {10‐1m} faceted surface GaN template

Optical Properties of Nanopillar AlGaN/GaN MQWs for Ultraviolet Light-Emitting Diodes.

Fabrication and Photoluminescence Study of Large-Area Ordered and Size-Controlled GeSi Multi-quantum-well Nanopillar Arrays

Epitaxy and Optical Properties of InGaN/GaN Multiple Quantum Wells on GaN Hexagonal Pyramids Template

Luminescence Characteristics in Hexagonal and Cubic‐phase GaN on Micropatterned Si(100) Substrate

Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy

Raman Spectra and Photoluminescence Spectra of InGaN/GaN Multiquantum Wells Annealed

The Ga-Nitride/Air Two-Dimensional Photonic Quasi-Crystals Fabricated on Gan-Based Light Emitters

Surface-Induced Carrier Localization and Recombination Characteristics in InGaN/GaN Quantum Dots in Nanopillars

InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays

Efficiency Enhancement of InGaN Amber MQWs Using Nanopillar Structures

Selective Epitaxy of Ingan/Gan Multiple Quantum Wells on Gan Side Facets