Abstract:LEDs based on hexagonal InGaN/GaN quantum wells are dominant technology for many lighting applications. However, their luminous efficacy for green and amber emission and at high drive currents remains limited. Growing quantum wells instead in the cubic phase is a promising alternative because, compared to hexagonal GaN, it benefits from a reduced bandgap and is free of the strong polarization fields that can reduce the radiative recombination rate. Initial attempts to grow cubic GaN in the 1990s employed molecular beam epitaxy, but now, metal-organic chemical vapor deposition can also be used. Nonetheless, high phase purity requires careful attention to growth conditions and the quantification of any unwanted hexagonal phase. In contrast to hexagonal GaN, in which threading dislocations are key, at its current state of maturity, the most important extended structural defects in cubic GaN are stacking faults. These modify the optical properties of cubic GaN films and propagate into active layers. In quantum wells and electron blocking layers, segregation of alloying elements at stacking faults has been observed, leading to the formation of quantum wires and polarized emission. This observation forms part of a developing understanding of the optical properties of cubic InGaN quantum wells, which also offer shorter recombination lifetimes than their polar hexagonal counterparts. There is also growing expertise in p-doping, including dopant activation by annealing. Overall, cubic GaN has rapidly transitioned from an academic curiosity to a real prospect for application in devices, with the potential to offer specific performance advantages compared to polar hexagonal material.

Luminescence Characteristics in Hexagonal and Cubic‐phase GaN on Micropatterned Si(100) Substrate

Cubic GaN and InGaN/GaN quantum wells

Normal Incidence Intersubband Absorption in GaN/AlN Superlattices Grown on Facet-Controlled Epitaxial Lateral Overgrown GaN/Sapphire Templates

Cathodoluminescence Study of InGaN/GaN Quantum-Well LED Structures Grown on a Si Substrate

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Luminescence Properties of GaN/InxGa1−xN/InyGa1−yN Double Graded Structures (Zigzag Quantum Wells)

Understanding the Luminescence Characteristics of Ultraviolet InGaN/AlGaN Multiple Quantum Wells with Different in Gradients

Multiwavelength Emission from InGaN/GaN MQW Truncated Pyramids Grown on a GaN Dodecagonal Pyramid Template

Epitaxy and Optical Properties of InGaN/GaN Multiple Quantum Wells on GaN Hexagonal Pyramids Template

Optical properties of cubic InGaN/GaN multiple quantum wells on 3C-SiC substrates by radio-frequency plasma-assisted molecular beam epitaxy

V-shaped Semipolar InGaN/GaN Multi-Quantum-well Light-Emitting Diodes Directly Grown on C-Plane Patterned Sapphire Substrates

InGaN/GaN multi-quantum-well nanowires and light emitting

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

Multi-color broadband visible light source via three-dimensional GaN hexagonal annular microstructures

Luminescence of A Gan Grain with A Nonpolar and Semipolar Plane in Relation to Microstructural Characterization

Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer

Ingan/Gan Blue Light Emitting Diodes Grown on Si(110) and Si(111) Substrates

Microscopic Structure of Al_(0.15)In_(0.01)Ga_(0.84)N/In_(0.2)Ga_(0.8)N and In_(0.2)Ga_(0.8)N/GaN of GaN-based Quantum-well

Phosphor-free White Emission from InGaN Quantum Wells Grown on in Situ Formed Submicron-Scale Multifaceted GaN Stripes

Structural and Optical Properties of InGaN/GaN Multiple Quantum Wells Structure for Ultraviolet Emission

Effect of hexagonal hillock on luminescence characteristic of multiple quantum wells structure