High brightness InP micropillars grown on silicon with Fermi level splitting larger than 1 eV.
Thai-Truong D Tran,Hao Sun,Kar Wei Ng,Fan Ren,Kun Li,Fanglu Lu,Eli Yablonovitch,Constance J Chang-Hasnain
DOI: https://doi.org/10.1021/nl500621j
IF: 10.8
2014-01-01
Nano Letters
Abstract:The growth of III-V nanowires on silicon is a promising approach for low-cost, large-scale III-V photovoltaics. However, performances of III-V nanowire solar cells have not yet been as good as their bulk counterparts, as nanostructured light absorbers are fundamentally challenged by enhanced minority carriers surface recombination rates. The resulting nonradiative losses lead to significant reductions in the external spontaneous emission quantum yield, which, in turn, manifest as penalties in the open-circuit voltage. In this work, calibrated photoluminescence measurements are utilized to construct equivalent voltage-current characteristics relating illumination intensities to Fermi level splitting Delta F inside InP microillars. Under I sun, we show that splitting can exceed Delta F similar to 0.90 eV in undoped pillars. This value can be increased to values of Delta F similar to 0.95 eV by cleaning pillar surfaces in acidic etchants. Pillars with nanotextured surfaces can yield splitting of Delta F similar to 0.90 eV, even though they exhibit high densities of stacking faults. Finally, by introducing n-dopants, Delta FF of 1.07 eV can be achieved due to a wider bandgap energy in n-doped wurzite InP, the higher brightness of doped materials, and the extraordinarily low surface recombination velocity of InP. This is the highest reported value for InP materials grown on a silicon substrate. These results provide further evidence that InP micropillars on silicon could be a promising material for low-cost, large-scale solar cells with high efficiency.