Abstract:Abstract Development of full-color and white light-emitting diodes (LEDs) and laser diodes (LDs) is tremendously important for energy-efficient lighting and advanced display applications. At present, the InGaN/GaN semiconductor heterostructure system is considered as the most promising device candidate for these applications because the direct band gap of In x Ga 1 − x N spans from the near-infrared (NIR) to the near-UV, including the complete visible spectrum. However, there are severe issues related to structural imperfection and polarization effects in high-In-content InGaN/GaN semiconductor heterostructures, resulting in low emission efficiency in the long-wavelength spectral region (beyond blue). To overcome the formidable material challenges in InGaN/GaN semiconductor heterostructures, many studies reported recently have suggested a promising solution based on full-color and white solid-sate emitters using one-dimensional (1D) nitride semiconductor nanostructures (nanorods, nanowires, nanocolumns, nanopillars, nanotubes, etc.). Especially, vertically self-aligned GaN nanorod arrays have been applied as strain-free or strain-reduced growth templates for heteroepitaxial growth of InGaN/GaN nanorod heterostructures emitting in the full visible spectrum. Moreover, 1D nitride semiconductor nanorod heterostructures can be grown by plasma-assisted molecular beam epitaxy and metal-organic vapor phase epitaxy with well-defined axial/radial geometries and abruptly modulated compositions to achieve unique device functionalities. In this chapter, we give a detailed discussion about nitride semiconductor nanorod heterostructures, including polarization effects, nanorod growth and polarity control, doping and surface properties, nanorod heterojunction band alignments, axial nanorod heterostructures for full-color and tunable white LEDs, as well as green and full-color core–shell nanorod plasmonic nanolasers. Some future perspectives will also be given for both fundamental studies and new device applications of nitride semiconductor nanorod heterostructures.

Nanoscale Optical Properties of Indium Gallium Nitride/Gallium Nitride Nanodisk-In-Rod Heterostructures

GaInN Light-Emitting Diodes with Omni-Directional Reflector Using Nanoporous SnO2 Film

Nitride Semiconductor Nanorod Heterostructures for Full-Color and White-Light Applications

Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure

Great Emission Enhancement And Excitonic Recombination Dynamics Of Ingan/Gan Nanorod Structures

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

The Effects of Nanocavity and Photonic Crystal in InGaN/GaN Nanorod LED Arrays

A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array.

Light Emission Induced by the Indium Distribution in InGaN Nanowires

High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence

Growth and Optical Properties of Highly Uniform and Periodic InGaN Nanostructures

Band Edge Modulation and Light Emission in Ingan Nanowires Due to the Surface State and Microscopic Indium Distribution

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

Understanding the p-Type GaN Nanocrystals on InGaN Nanowire Heterostructures

Formation of Nanorod InGaN/GaN Multiple Quantum Wells Using Nickel Nano-Masks and Dry Etching for InGaN-based Light-Emitting Diodes

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate

Inhomogeneous spatial distribution of non radiative recombination centers in GaN/InGaN nanowire heterostructures studied by cathodoluminescence

Nano-fabrication and Related Optical Properties of InGaN/GaN Nanopillars.

Graphene‐Nanorod Enhanced Quasi‐Van Der Waals Epitaxy for High Indium Composition Nitride Films

Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale