Abstract:Both well vertically aligned and uniformly separated (In)GaN nanorods (NRs) were successfully grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. Effects of supplied indium (In) flux on the morphology of (In)GaN NRs were investigated systematically. The scanning electron microscopic analysis and transmission electron microscopic measurements revealed that the presence of In flux can help to inhibit NR coalescence and obtain well-separated (In)GaN NRs. By increasing the supplied In flux, the densities of (In)GaN NRs decreased and the axial growth rates increased. According to the energy dispersive X-ray spectrometry measurements and theoretical calculations, the increase of In content of the NRs enhanced Ga diffusion on the NR sidewalls, which resulted in an increased axial growth rate. A kinetic In-assisted growth model for the well-separated (In)GaN NRs is therefore proposed. The model explains that the presence of In flux not only reduces the density of (In)GaN NRs due to the increase in substrate surface migration of Ga adatoms at nucleation stage but also lead to a remarkable enhancement of axial growth rate at growth stage. Consequently, the NR coalescence was significantly suppressed. The results provide a demonstration of obtaining well-separated (In)GaN NRs and open up further possibility of developing (In)GaN NR-based optoelectronic devices.

Great Emission Enhancement And Excitonic Recombination Dynamics Of Ingan/Gan Nanorod Structures

Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale

The Mechanism of Indium-Assisted Growth of (in)gan Nanorods: Eliminating Nanorod Coalescence by Indium-Enhanced Atomic Migration.

Nanoscale Optical Properties of Indium Gallium Nitride/Gallium Nitride Nanodisk-In-Rod Heterostructures

Effects Of Reduced Exciton Diffusion In Ingan/Gan Multiple Quantum Well Nanorods

Band Edge Modulation and Light Emission in Ingan Nanowires Due to the Surface State and Microscopic Indium Distribution

The quantum efficiency study of GaN nanorods

The Effects of Nanocavity and Photonic Crystal in InGaN/GaN Nanorod LED Arrays

Band Edge Emission Improvement by Energy Transfer in Hybrid III-Nitride/Organic Semiconductor Nanostructure*

Bloch Surface Plasmon Enhanced Blue Emission from Ingan/Gan Light-Emitting Diode Structures with Al-Coated Gan Nanorods

Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure

Large-scale Fabrication and Luminescence Properties of GaN Nanostructures by a Soft UV-curing Nanoimprint Lithography.

Optical and Spatial Resolved Cathodoluminescence Study of Phase Separation in Green InGaN Sandwiched Structure Grown on GaN Nanorods by MOCVD

Time-Resolved Photoluminescence Studies Of Indium-Rich Ingan Alloys

High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence

Investigating the exciton dynamics in InGaN/GaN core-shell nanorods using time-resolved cathodoluminescence

Near-infrared Light Emission from Si-rich Oxynitride Nanostructures

Temperature-dependent steady and transient emission properties of InGaN/GaN multiple quantum well nanorods

Light Emission Induced by the Indium Distribution in InGaN Nanowires

Graphene‐Nanorod Enhanced Quasi‐Van Der Waals Epitaxy for High Indium Composition Nitride Films

Investigation Of Surface-Plasmon Coupled Red Light Emitting Ingan/Gan Multi-Quantum Well With Ag Nanostructures Coated On Gan Surface