Excitation Dependent Two-Component Spontaneous Emission and Ultrafast Amplified Spontaneous Emission in Dislocation-Free Ingan Nanowires

Guanjun You,Wei Guo,Chunfeng Zhang,Pallab Bhattacharya,Ron Henderson,Jian Xu

DOI: https://doi.org/10.1063/1.4794418

IF: 4

2013-01-01

Applied Physics Letters

Abstract:Amplified spontaneous emission (ASE) at 456 nm from In0.2Ga0.8N nanowires grown on (001) silicon by catalyst-free molecular beam epitaxy was observed at room temperature under femtosecond excitation. The photoluminescence spectra below ASE threshold consist of two spontaneous emission bands centered at similar to 555 nm and similar to 480 nm, respectively, revealing the co-existence of deeply and shallowly localized exciton states in the nanowires. The ASE peak emerges from the 480 nm spontaneous emission band when the excitation density exceeds similar to 120 mu J/cm(2), indicating that optical gain arises from the radiative recombination of shallowly localized excitons in the nanowires. Time-resolved photoluminescence measurements revealed that the ASE process completes within 1.5 ps, suggesting a remarkably high stimulated emission recombination rate in one-dimensional InGaN nanowires. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794418]