Abstract:Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy. The nanowires contain single GaN quantum disks embedded in long (Al,Ga)N nanowire segments essential for efficient light extraction. These quantum disks are found to exhibit intense emission at unexpectedly high energies, namely, significantly above the GaN bandgap, and almost independent of the disk thickness. An in-depth investigation of the actual structure and composition of the nanowires reveals a spontaneously formed Al gradient both along and across the nanowire, resulting in a complex core/shell structure with an Al deficient core and an Al rich shell with continuously varying Al content along the entire length of the (Al,Ga)N segment. This compositional change along the nanowire growth axis induces a polarization doping of the shell that results in a degenerate electron gas in the disk, thus screening the built-in electric fields. The high carrier density not only results in the unexpectedly high transition energies, but also in radiative lifetimes depending only weakly on temperature, leading to a comparatively high internal quantum efficiency of the GaN quantum disks up to room temperature.

Single-photon emission from a further confined InGaN/GaN quantum disc via reverse-reaction growth.

Single Photon Source Based on an InGaN Quantum Dot in a Site-Controlled Optical Horn Structure

Direct Evidence of Recombination Between Electrons in InGaN Quantum Discs and Holes in P-Type GaN.

Single-photon Emission from Isolated Monolayer Islands of InGaN

Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires

Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters

Disk-Shaped GaN Quantum Dots Embedded in AlN Nanowires for Room-Temperature Single-Photon Emitters Applicable to Quantum Information Technology

Light Emission Induced by the Indium Distribution in InGaN Nanowires

Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire.

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

On demand single photon generation and coherent control of excitons from resonantly driven nanowire quantum dots

Single photon emitters in thin GaAsN nanowire tubes grown on Si

Infrared Stimulated Emission with an Ultralow Threshold from Low-Dislocation-density InN Films Grown on a Vicinal GaN Substrate

Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization

Quantum Light Generation Based on GaN Microring Toward Fully On-Chip Source

Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

One-Step Fabrication Method of GaN Films for Internal Quantum Efficiency Enhancement and Their Ultrafast Mechanism Investigation

Scaling Nanowire-Supported GaN Quantum Dots to the Sub-10 nm Limit, Yielding Complete Suppression of the Giant Built-in Potential

InGaN/GaN multi-quantum-well nanowires and light emitting

Quantum Light Generation based on GaN Microring towards Fully On-chip Source