Abstract:We have used a scanning near-field optical microscope to study the fluorescent light distribution in the near- and far-fields with two types of microdiscs, InGaP and GaN, fabricated in our laboratory. The InGaP microdisc has a radius of 2.5-5.0 microm, a thickness of 0.15-0.2 microm and a circular shape and the GaN disc has a radius of 5-8 microm with a thickness of 0.5-2 microm. Spontaneous emission enhancement in these microdiscs has been observed with emitting wavelengths of 650 and 550 nm respectively In both types of microdisc, the whispering-gallery mode (WCM) has been observed on the top surface using near-field optical and far-field microscopic methods. However, due to the different disc structures and optical confinements, the light distributions of the type types of disc are quite different. In the case of the InGaP disc, WGM is the dominant mode with a mixture of other modes. Interference-like ring intensities have been observed both inside the disc surface and outside, with a period ratio of 1:2. In addition, the propagating waves emitted from the side of the disc have been collected for the first time by using near-field optical microscopy. A theoretical calculation based on the theory of optical modes in microdisc lasers confirmed this observation. It also predicted the behaviour of the electric field distribution (transverse electric) inside and outside the disc, as well as the period of the wave propagation. In contrast, the near-field mapping of the GaN fluorescence showed not only a ring-like emission intensity along the circumference of the disc, an indication of WGM, but also an even intensity distribution inside the disc. This can be explained as the combination of the WGM with the Fabry-Perot mode of multi-reflection between the GaN layer and the substrate. The results also demonstrate the potential application of near-field optics to explore the light emission mode of a microdisc on a nanometre scale.

Direct Evidence of Recombination Between Electrons in InGaN Quantum Discs and Holes in P-Type GaN.

Single-photon emission from a further confined InGaN/GaN quantum disc via reverse-reaction growth.

Electroluminescence Induced by Photoluminescence Excitation in GaInN/GaN Light-Emitting Diodes

Cathodoluminescence nano-characterization of individual GaN/AlN quantum disks embedded in nanowires

Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

Luminescence Emission from Al0.3Ga0.7N/GaN Multi Quantum Disc core/shell Nanowire: Numerical approach

Defect Recombination Induced by Density-Activated Carrier Diffusion in Nonpolar InGaN Quantum Wells

Carrier Dynamics Of Inxga1-Xn Quantum Disks Embedded In Gan Nanocolumns

Near-field mapping of the emission distribution in semiconductor microdiscs

Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization

Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy

Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

Photoluminescence Study of InGaN/GaN Quantum Dots Grown on Passivated GaN Surface

Origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED

Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence

Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy

Nonradiative Energy Transfer Between Colloidal Quantum Dot-Phosphors and Nanopillar Nitride Leds

Direct Observation and Theoretical Interpretation of Strongly Enhanced Lateral Diffusion of Photogenerated Carriers in InGaN∕GaN Quantum Well Structures

Photoluminescence and Absorption in InGaN Films with InN Segregation

Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures

Inhomogeneous spatial distribution of non radiative recombination centers in GaN/InGaN nanowire heterostructures studied by cathodoluminescence