Abstract:An efficient monolithically integrated light source with complementary metal-oxide-semiconductor (CMOS) compatibility remains the missing component to enable Si photonics for various applications. In particular, vertical-cavity-surface-emitting (VCSE) light sources, such as resonant cavity light-emitting diodes (RCLEDs) and vertical-cavity surface-emitting lasers (VCSELs), are strong contenders due to their compact size, circular emission profile with low beam divergence, wafer-scale fabrication compatibility, high bandwidth, and high coupling efficiency to fiber optic cables. We report the first demonstration of 8-in. wafer-scale GeSn/Ge multiple-quantum-well VCSE p-i-n structures and diodes for laser or light-emitting diode (LED) applications in Si photonics by wafer bonding and layer transfer techniques, which are challenging for all-epitaxy routes. The wafer could be 12 in. (300 mm) since the MQW gain medium is grown on a 300 mm Si wafer, and the bonding is wafer-scale. Alternative dielectric layers (SiO2/SiN/SiO2), introduced by wafer bonding, under the emitting structure, serve as the bottom mirror for the vertical cavity. The Ge0.92Sn0.08/Ge MQW layer is utilized to improve the material quality and to confine injected carriers. As a result, more than 8× enhancement of light emission due to the vertical cavity resonance was demonstrated by photoluminescence spectroscopy. Besides, the spectral purity is enhanced by the single-longitudinal-mode cavity. The intensity of light emission is insensitive to the temperature range from 4 to 300 K and even becomes stronger at higher temperatures since the stronger resonant cavity effect at higher temperatures compensates for the drop in light emission efficiency caused by nonradiative centers. The vertical cavity effect on the light emission is further verified by reflectivity spectroscopy and optical simulations. A positive gain can be achieved as indicated by optical gain calculations. Room-temperature electroluminescence and an excellent carrier injection efficiency of the MQW VCSE diode are observed, showing its potential for electrically injected RCLEDs and VCSELs.

Quantum Light Generation based on GaN Microring towards Fully On-chip Source

Quantum Light Generation Based on GaN Microring Toward Fully On-Chip Source

Gallium Nitride Microring Based Quantum Light Source

Unidirectional emission of GaN-on-Si microring laser and its on-chip integration

Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation

On-Chip Generation and Manipulation of Entangled Photons Based on Reconfigurable Lithium-Niobate Waveguide Circuits

Gallium Arsenide (gaas) Quantum Photonic Waveguide Circuits

Single Germanium Quantum Dot Embedded in Photonic Crystal Nanocavity for Light Emitter on Silicon Chip.

Ultra-bright entangled-photon pair generation from an AlGaAs-on-insulator microring resonator

Room-temperature lasing action in GaN quantum wells in the infrared 1.5 micron region

On-chip generation and guiding of quantum light from a site-controlled quantum dot

Broadband Photonic Structures for Quantum Light Sources

128 Identical Quantum Sources Integrated on a Single Silica Chip

Disk-Shaped GaN Quantum Dots Embedded in AlN Nanowires for Room-Temperature Single-Photon Emitters Applicable to Quantum Information Technology

Monolithic Photonic Integration of Suspended Light Emitting Diode, Waveguide and Photodetector

Membrane-type Photonic Integration of InGaN/GaN Multiple-Quantum-well Diodes and Waveguide

GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting p-i-n Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform

High Visibility Time-Energy Entangled Photons from a Silicon Nanophotonic Chip

Quantum random number generator based on single-photon emitter in gallium nitride

Pushing the limits on chip-scale quantum light generation for sensing and precision metrology

Quantum photonics hybrid integration platform