Abstract:The observation of single‐photon emission of self‐organized GaN/AlN quantum dots (QDs) grown on an epitaxial deep‐UV Bragg reflector is followed by completing the resonant cavity and fabricating resonant cavity nanopillars with GaN QDs as gain medium using an optimized process of focused ion beam etching. The GaN QDs still emit at λ = 255 nm under electron beam excitation. Herein, integrating GaN quantum dots (QDs) within a resonant cavity is focused on. Utilizing metal‐organic vapor phase epitaxy, controlled growth of GaN QDs on AlN is achieved. A deep‐UV distributed Bragg reflector (DBR) with high reflectivity in the 250–300 nm range, using AlN and Al0.7Ga0.3N layers to maximize refractive index contrast, is developed. A 50‐period DBR achieves 98% reflectivity at a wavelength of 272 nm. Scanning transmission electron microscopy and electron energy loss spectroscopy analyses reveal a trisection of DBR periods, attributed to a Ga composition pulling effect during growth. The real structure's reflectivity is simulated and matched well with measured data, though actual reflectivity is lower than the ideal. Cathodoluminescence studies at T = 17 K show emission peaks from both the DBR and the GaN QDs. Further, single‐photon emission is demonstrated with a g(2)(t = 0) value of 0.41 at 272.7 nm, confirming the potential for deep‐UV single‐photon sources. Additionally, the creation of a planar resonant cavity with enhanced emission intensity and vertical nanopillar structures with an aspect ratio of 11 and a diameter of 400 nm confirm the successful integration of GaN QDs in advanced UV photonic structures.

Single Photon Source Based on an InGaN Quantum Dot in a Site-Controlled Optical Horn Structure

Excitation and emission dynamics of a single photon emitting InGaN quantum dot in a photonic horn structure

Single-photon emission from a further confined InGaN/GaN quantum disc via reverse-reaction growth.

Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires

Disk-Shaped GaN Quantum Dots Embedded in AlN Nanowires for Room-Temperature Single-Photon Emitters Applicable to Quantum Information Technology

Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters

On demand single photon generation and coherent control of excitons from resonantly driven nanowire quantum dots

Single photon emission from ODT passivated near-surface GaAs quantum dots

GaN Quantum Dots in Resonant Cavity Nanopillars as Deep‐UV Single‐Photon Sources

Single-photon Emission from Isolated Monolayer Islands of InGaN

Nanoscale optical positioning of single quantum dots for bright and pure single-photon emission

Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate

High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band

Fiber-based unidirectional emission with enhanced extraction efficiency of a single quantum dot from an optimized structure

Single photon emission in the telecom C-band from nanowire-based quantum dots

Strain Spectrally-Tunable Single-Photon Source Based on a Quantum Dot in Microcavity (conference Presentation)

Near Transform-Limited Quantum Dot Linewidths in a Broadband Photonic Crystal Waveguide

Ultrafast Green Single Photon Emission from an InGaN Quantum Dot-in-a-GaN Nanowire at Room Temperature

Efficient demultiplexed single-photon source with a quantum dot coupled to a nanophotonic waveguide

Bright single InAs quantum dots at telecom wavelengths in site-selective InP nanowires

Scaling Nanowire-Supported GaN Quantum Dots to the Sub-10 nm Limit, Yielding Complete Suppression of the Giant Built-in Potential