Abstract:Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we utilize the distinctive, high quality (Q~5500) modes of the cavities, and the change in the highest intensity mode as a function of pump power to better understand the dominant radiative processes. The variations of threshold power and lasing wavelength as a function of gain medium help us identify the possible limitations to lower-threshold lasing with quantum dot active medium. In addition, we have identified a distinctive lasing signature for quantum dot materials, which consistently lase at wavelengths shorter than the peak of the room temperature gain emission. These findings not only provide better understanding of lasing in nitride-based quantum dot cavity systems, but also shed insight into the more fundamental issues of light matter coupling in such systems.

Excitation and emission dynamics of a single photon emitting InGaN quantum dot in a photonic horn structure

Single Photon Source Based on an InGaN Quantum Dot in a Site-Controlled Optical Horn Structure

Dynamic Vibronic Coupling in InGaAs Quantum Dots [Invited]

Population Dynamics and Photon Emission Statistics of the Coupled Semiconductor Quantum Dots Driven by Pulse Field

Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures

Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires

Non-thermal Emission from InGaAs Quantum Dots in a Microcavity: A Novel Cavity-Bottleneck Effect

Single-photon emission from a further confined InGaN/GaN quantum disc via reverse-reaction growth.

Quantum Dissipation and Broadening Mechanisms Due to Electron-Phonon Interactions in Self-Formed Ingan Quantum Dots

On demand single photon generation and coherent control of excitons from resonantly driven nanowire quantum dots

Surface Emission Of Inxga1-Xn Epilayers Under Strong Optical Excitation

Time Dependent Study of Multiple Exciton Generation in Nanocrystal Quantum Dots

Photoluminescence Study of InGaN/GaN Quantum Dots Grown on Passivated GaN Surface

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Spontaneous emission control of single quantum dots by electromechanical tuning of a photonic crystal cavity

Photoluminescence Intermittency of Ingaas/Gaas Quantum Dots Confined in A Planar Microcavity

Exciton states and interband optical transitions in InGaN quantum dots

Growth and Characterization of InGaN Nanodots Hybrid with InGaN/GaN Quantum Wells

Optical Properties of GaN/AlN Quantum Dots under Intense Laser Field

Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities

Single- and Twin-Photons Emitted from Fiber-Coupled Quantum Dots in a Distributed Bragg Reflector Cavity