Abstract:The observation of single‐photon emission of self‐organized GaN/AlN quantum dots (QDs) grown on an epitaxial deep‐UV Bragg reflector is followed by completing the resonant cavity and fabricating resonant cavity nanopillars with GaN QDs as gain medium using an optimized process of focused ion beam etching. The GaN QDs still emit at λ = 255 nm under electron beam excitation. Herein, integrating GaN quantum dots (QDs) within a resonant cavity is focused on. Utilizing metal‐organic vapor phase epitaxy, controlled growth of GaN QDs on AlN is achieved. A deep‐UV distributed Bragg reflector (DBR) with high reflectivity in the 250–300 nm range, using AlN and Al0.7Ga0.3N layers to maximize refractive index contrast, is developed. A 50‐period DBR achieves 98% reflectivity at a wavelength of 272 nm. Scanning transmission electron microscopy and electron energy loss spectroscopy analyses reveal a trisection of DBR periods, attributed to a Ga composition pulling effect during growth. The real structure's reflectivity is simulated and matched well with measured data, though actual reflectivity is lower than the ideal. Cathodoluminescence studies at T = 17 K show emission peaks from both the DBR and the GaN QDs. Further, single‐photon emission is demonstrated with a g(2)(t = 0) value of 0.41 at 272.7 nm, confirming the potential for deep‐UV single‐photon sources. Additionally, the creation of a planar resonant cavity with enhanced emission intensity and vertical nanopillar structures with an aspect ratio of 11 and a diameter of 400 nm confirm the successful integration of GaN QDs in advanced UV photonic structures.

Single-photon Emission from Isolated Monolayer Islands of InGaN

Single-photon emission from a further confined InGaN/GaN quantum disc via reverse-reaction growth.

Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters

Exciton Emission of Quasi-2D InGaN in GaN Matrix Grown by Molecular Beam Epitaxy

Single Photon Source Based on an InGaN Quantum Dot in a Site-Controlled Optical Horn Structure

Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Fabrication and Characterization of Novel Monolayer InN Quantum Wells in a GaN Matrix

Light Emission Induced by the Indium Distribution in InGaN Nanowires

Light Emission from Several-Atom In–N Clusters in Wurtzite Ga-rich InGaN Alloys and InGaN/GaN Strained Quantum Wells

Single nanowire green InGaN/GaN light emitting diodes.

GaN Quantum Dots in Resonant Cavity Nanopillars as Deep‐UV Single‐Photon Sources

Raman And Photoluminescence Characterization Of Focused Ion Beam Patterned Ingan/Gan Multi-Quantum-Wells Nanopillar Array

Optical Properties of Ultra-Thin Inn Layer Embedded in Ingan Matrix for Light Emitters

Disk-Shaped GaN Quantum Dots Embedded in AlN Nanowires for Room-Temperature Single-Photon Emitters Applicable to Quantum Information Technology

Single photon emitters in thin GaAsN nanowire tubes grown on Si

Green emission from a strain-modulated InGaN active layer

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization

Surface-Induced Carrier Localization and Recombination Characteristics in InGaN/GaN Quantum Dots in Nanopillars

Electrically Driven Single-Photon Emission from an Isolated Single Molecule