Exciton localization and dynamics in GaNAsP nanowires

M. Jansson,W. M. Chen,I. A. Buyanova

DOI: https://doi.org/10.1063/5.0179114

IF: 2.877

2024-01-23

Journal of Applied Physics

Abstract:This work investigates exciton localization and dynamics in semiconductor GaNAsP nanowires (NWs) with varying nitrogen concentrations. Through detailed time-resolved photoluminescence studies, we identify a nitrogen composition-dependent difference in exciton transfer between localized states formed due to alloy disorder. With [N] = 0.1%, the localized states exhibit cluster-like, non-interacting behavior, whereas at [N] = 1.1%, a continuous band of localized states is observed. Additionally, the phosphorous incorporation in the NWs appears to enhance the exciton spatial confinement compared to behaviors observed in phosphorous-free GaNAs NWs, emphasizing the role of the alloy composition in the nature of exciton localization. Temperature is highlighted as a significant factor affecting exciton mobility, enabling efficient transfer between the localized states at higher temperatures. This, in turn, influences exciton lifetimes. Our findings, therefore, shed light on the nature of exciton dynamics in GaNAsP NWs, enriching our understanding of these materials and paving the way for their applications in optoelectronics.

physics, applied

What problem does this paper attempt to address?

The problem this paper attempts to address is the study of exciton localization and dynamics in gallium nitride arsenide phosphide (GaNAsP) nanowires, particularly the impact of different nitrogen contents on these properties. Specifically, the authors investigate the differences in exciton transfer between localized states caused by variations in nitrogen composition through detailed time-resolved photoluminescence (PL) studies. Additionally, the incorporation of phosphorus and its effect on the spatial confinement of excitons, as well as the influence of temperature on exciton mobility and lifetime, are analyzed.

### Main Research Questions:
1. **Exciton Localization**: How are excitons localized in GaNAsP nanowires with different nitrogen contents? What are the differences in the properties of the localized states?
2. **Exciton Dynamics**: How does the variation in nitrogen content affect exciton transfer between localized states? What is the impact of phosphorus incorporation on exciton dynamics?
3. **Temperature Effects**: How does temperature affect exciton mobility and lifetime? What changes occur in exciton behavior at high temperatures?

### Research Background:
- **Semiconductor Nanowires**: Due to their enhanced light-matter interaction, semiconductor nanowires have garnered significant attention in optoelectronic applications.
- **Nitride Alloys**: Particularly dilute nitride alloys, are of great interest due to their significant bandgap bowing properties. Small changes in nitrogen content can lead to substantial changes in bandgap energy, thereby expanding the application range of these materials.
- **Localized States**: The incorporation of nitrogen typically leads to the formation of localized states, which have a significant impact on carrier mobility and exciton dynamics.

### Research Methods:
- **Sample Preparation**: GaNAsP nanowires were synthesized on Si(111) substrates using Ga droplet-catalyzed molecular beam epitaxy (MBE).
- **Optical Measurements**: Time-resolved photoluminescence (PL) measurements were conducted using a pulsed Ti:sapphire laser, and photoluminescence excitation (PLE) measurements were performed using a continuous-wave tunable Ti:sapphire laser.

### Main Findings:
- **Low Nitrogen Content Sample** (0.1% N): Localized states appear as isolated, non-interacting clustered structures, with slow exciton transfer between these localized states.
- **High Nitrogen Content Sample** (1.1% N): Localized states form continuous band tail states, allowing excitons to transfer freely between these states, exhibiting a significant redshift phenomenon.
- **Phosphorus Incorporation**: The incorporation of phosphorus enhances the spatial confinement of excitons, limiting exciton transfer between different localized states.
- **Temperature Effects**: As temperature increases, exciton transfer between localized states becomes more free, leading to a shortened exciton lifetime and an increased non-radiative recombination rate.

### Conclusion:
- This study reveals significant differences in exciton localization and dynamics in GaNAsP nanowires with varying nitrogen contents, emphasizing the important impact of nitrogen content and phosphorus incorporation on exciton behavior. These findings contribute to a deeper understanding of the properties of these materials, providing a theoretical foundation for their further development in optoelectronic applications.