Abstract:Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal position of the sources for the different constituents in the growth reactor, substrate rotation, and nanowire self-shadowing inevitably lead to sequential deposition. Here, we uncover for In$_{0.15}$Ga$_{0.85}$As/GaAs shell quantum wells grown by molecular beam epitaxy a drastic impact of this sequentiality on the luminescence efficiency. The photoluminescence intensity of shell quantum wells grown with a flux sequence corresponding to migration enhanced epitaxy, i. e. when As and the group-III metals essentially do not impinge at the same time, is more than two orders of magnitude higher than for shell quantum wells prepared with substantially overlapping fluxes. Transmission electron microscopy does not reveal any extended defects explaining this difference. Our analysis of photoluminescence transients shows that co-deposition has two detrimental microscopic effects. First, a higher density of electrically active point defects leads to internal electric fields reducing the electron-hole wave function overlap. Second, more point defects form that act as nonradiative recombination centers. Our study demonstrates that the source arrangement of the growth reactor, which is of mere technical relevance for planar structures, can have drastic consequences for the materials properties of nanowire shells. We expect that this finding holds also for other alloy nanowire shells.

Exciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dots

Ultrafast Dynamics of Exciton Formation in Semiconductor Nanowires

Nearly Intrinsic Exciton Lifetimes in Single Twin-Free Gaas/Algaas Core-Shell Nanowire Heterostructures

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Small linewidth and short lifetime of emission from GaAs/AlAs core/shell quantum dots on the facet of GaAs nanowire

Optical, structural, and numerical investigations of GaAs/AlGaAs core-multishell nanowire quantum well tubes

Photoluminescence Study of GaAs Nanowires with and Without AlGaAs Shell

Exciton localization and dynamics in GaNAsP nanowires

Growth, Structural and Optical Properties of GaAs/AlGaAs Core/Shell Nanowires with and without Quantum Well Shells

Spatially-resolved luminescence and crystal structure of single core–shell nanowires measured in the as-grown geometry

Drastic effect of sequential deposition resulting from flux directionality on the luminescence efficiency of nanowire shells

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Ultrafast carrier relaxation dynamics of photoexcited GaAs and GaAs/AlGaAs nanowire array

Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires

Determination of the optimal shell thickness for self-catalysed GaAs/AlGaAs core-shell nanowires

Long Minority Carrier Lifetime In Au-Catalyzed Gaas/Alxga1-Xas Core-Shell Nanowires

Direct Imaging of the Spatial Diffusion of Excitons in Single Semiconductor Nanowires

Optical Spectroscopy of Quantum Confined States in Gaas/Algaas Quantum Well Tubes

The electronic structure and effective excitonic g factors of GaAs/GaMnAs core-shell nanowires

Temperature insensitive optical alignment of the exciton in nanowire embedded GaN Quantum Dots

Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures