Abstract:The luminescence and inner structure of GaAs-AlGaAs quantum well tube (QWT) nanowires were studied using low-temperature cathodoluminescence (CL) spectroscopic imaging, in combination with scanning transmission electron microscopy (STEM) tomography, allowing for the first time a robust correlation between the luminescence properties of these nanowires and their size and inner 3D structure down to the nanoscale. Besides the core luminescence and minor defects-related contributions, each nanowire showed one or more QWT peaks associated with nanowire regions of different diameters. The values of the GaAs shell thickness corresponding to each QWT peak were then determined from the nanowire diameters by employing a multishell growth model upon validation against experimental data (core diameter and GaAs and AlGaAs shell thickness) obtained from the analysis of the 3D reconstructed STEM tomogram of a GaAs-AlGaAs QWT nanowire. We found that QWT peak energies as a function of thus-estimated (3-7 nm) GaAs shell thickness are 40-120 meV below the theoretical values of exciton recombination for uniform QWTs symmetrically wrapped around a central core. However, the analysis of the 3D tomogram further evidenced azimuthal asymmetries as well as (azimuthal and axial) random fluctuations of the GaAs shell thickness, suggesting that the red-shift of QWT emissions is prominently due to carrier localization. The CL mapping of QWT emission intensities along the nanowire axis allowed to directly image the nanoscale localization of the emission, supporting the above picture. Our findings contribute to a deeper understanding of the luminescence-structure relationship in QWT nanowires and will foster their applications as efficient nanolaser sources for future monolithic integration onto silicon.

Growth, Structural and Optical Properties of GaAs/AlGaAs Core/Shell Nanowires with and without Quantum Well Shells

Optical, structural, and numerical investigations of GaAs/AlGaAs core-multishell nanowire quantum well tubes

Spatially-resolved luminescence and crystal structure of single core–shell nanowires measured in the as-grown geometry

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

Exciton dynamics in GaAs/(Al,Ga)As core-shell nanowires with shell quantum dots

High Efficiency Ultraviolet Emission from AlxGa1−xN Core-Shell Nanowire Heterostructures Grown on Si (111) by Molecular Beam Epitaxy

Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

Nanoscale spectroscopic imaging of GaAs-AlGaAs quantum well tube nanowires: correlating luminescence with nanowire size and inner multishell structure

Core-shell GaN/AlGaN nanowires grown by selective area epitaxy

On Optical Properties of Gaas and Gaas/Algaas Core-Shell Periodic Nanowire Arrays

Bending and reverse bending during the fabrication of novel GaAs/(In,Ga)As/GaAs core-shell nanowires monitored by in situ X-ray diffraction

Spontaneous formation of well-defined Al rich shell structures in AlxGa1-xN/GaN nanowires

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon

Optical properties of quasi-type-II structure in GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires

Structural And Optical Properties Of M-Plane Gan/Algan Quantum Wires Grown By Metalorganic Chemical Vapor Deposition

Controlling the morphology and wavelength of self-assembled coaxial GaAs/Ga(As)Sb/GaAs single quantum-well nanowires

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Determination of the optimal shell thickness for self-catalysed GaAs/AlGaAs core-shell nanowires

Surface passivation and self-regulated shell growth in selective area-grown GaN-(Al,Ga)N core-shell nanowires