Abstract:The GaAsSb-based quantum well plays a very important role in optoelectronic devices due to its excellent wavelength tunability. When the dimension reduces, the quantum confinement effect will take place and the quantum well in nanowires will show many interesting characteristics. GaAsSb-based quantum-well nanowires are of contemporary interest. However, the properties of the quasi-type-II structure in a single quantum well nanowire have been rarely investigated. Here, we grow GaAs/GaAs0.92Sb0.08/GaAs coaxial single quantum-well nanowires and discussed their power-dependent and temperature-dependent photoluminescence. We find that due to the small band offset of conduction bands, both type-I like and type-II like emission exist in our nanowires. When electrons obtain enough thermal energy through collisions or surrounding environment, they will overcome the barrier and diffuse to the GaAs conduction band, which contributes to the type-II like recombination. These results show the optical property of the quasi-type-II quantum well in nanowires, which can pave the way toward future nanoscale quantum well devices.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the optical properties of the quasi - II - type structure in GaAs/GaAsSb/GaAs coaxial single - quantum - well nanowires. Specifically, the researchers aim to explore the photoluminescence (PL) properties of this special structure under different power and temperature conditions in order to understand the internal electron behavior and energy transfer mechanisms. ### Research Background GaAsSb - based quantum wells play an important role in optoelectronic devices due to their excellent wavelength tunability. When the size is reduced, the quantum confinement effect becomes more significant, resulting in many interesting properties of the quantum wells. However, there have been relatively few previous studies on the properties of the quasi - II - type structure in single - quantum - well nanowires. ### Main Problems 1. **Formation and Properties of the Quasi - II - Type Structure**: - Grow GaAs/GaAs\(_{0.92}\)Sb\(_{0.08}\)/GaAs coaxial single - quantum - well nanowires by molecular beam epitaxy (MBE) method. - Explore the photoluminescence properties of this structure under different excitation powers and temperatures. 2. **Behavior of Electrons and Holes**: - In this structure, the conduction - band offset is small, resulting in both type - I and type - II luminescence behaviors. - When electrons obtain sufficient thermal energy, they can overcome the potential barrier and diffuse into the GaAs conduction band, thus contributing to type - II recombination. 3. **Temperature Dependence and Power Dependence**: - The photoluminescence properties in the temperature range from 10 K to 240 K and under different excitation powers are studied. - It is found that as the temperature increases, some trapped electrons obtain sufficient energy, resulting in type - II luminescence becoming dominant. ### Key Findings - **Existence of the Quasi - II - Type Structure**: At a low Sb mole fraction, a quasi - II - type band alignment is formed, which contains a small conduction - band offset. - **Luminescence Mechanisms**: There are two main luminescence mechanisms, corresponding to type - I and type - II behaviors respectively. The P1 peak (1.354 eV) may come from type - II behavior, while the P2 peak (1.328 eV) represents type - I behavior. - **Temperature and Power Dependence**: As the temperature increases, the P2 peak gradually disappears, while the P1 peak exists throughout the temperature range; as the excitation power increases, the intensity of the P1 peak increases more rapidly and a blue - shift phenomenon occurs. ### Conclusion This work demonstrates the dynamic properties of the quasi - II - type structure in GaAs/GaAsSb quantum - well nanowires, and these properties may play an important role in the future applications of nanoscale quantum - well devices. By deeply understanding the optical properties of this structure, theoretical support can be provided for the design and optimization of high - performance optoelectronic devices.

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