Abstract:The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes (LEDs) have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi-quantum well (MQW) LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence (PL) spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows: 1) the improvement in crystal quality, namely the reduction in V-defects; 2) the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3) the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.

Study on the Optical Properties of GaN-Based Multiple Quantum Well Embedded in Nanostructures

High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence

Characteristics of Nanoporous Ingan/Gan Multiple Quantum Wells

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

InGaN/GaN multi-quantum-well nanowires and light emitting

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

Epitaxy and Optical Properties of InGaN/GaN Multiple Quantum Wells on GaN Hexagonal Pyramids Template

Nanoscale Cathodoluminescence Spectroscopy Probing the Nitride Quantum Wells in an Electron Microcope

Optical properties of quasi-type-II structure in GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires

Microscopic Structure of Al_(0.15)In_(0.01)Ga_(0.84)N/In_(0.2)Ga_(0.8)N and In_(0.2)Ga_(0.8)N/GaN of GaN-based Quantum-well

Nanoscale Cathodoluminescence Spectroscopy Probing the Nitride Quantum Wells in an Electron Microscope

The quantum efficiency study of GaN nanorods

Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure