Abstract:Nanowires are versatile nanostructures, which allow an exquisite control over bandgap energies and charge carrier dynamics making them highly attractive as building blocks for a broad range of photonic devices. For optimal solutions concerning device performance and cost, a crucial element is the selection of a suitable material system which could enable a large wavelength tunability, strong light interaction and simple integration with the mainstream silicon technologies. The emerging GaBiAs alloys offer such promising features and may lead to a new era of technologies. Here, we apply million-atom atomistic simulations to design GaBiAs/GaAs core-shell nanowires suitable for low-loss telecom-wavelength photonic devices. The effects of internal strain, Bi Composition (x), random alloy configuration, and core-to-shell diameter ratio ($\rm \rho_D$) are analysed and delineated by systematically varying these attributes and studying their impact on the absorption wavelength and charge carrier confinement. The complex interplay between x and $\rm \rho_D$ results in two distinct pathways to accomplish 1.55 um optical transitions: either fabricate nanowires with $\rm \rho_D \geq$ 0.8 and $x \sim$15\%, or increase $x$ to $\sim$30\% with $\rm \rho_D \leq$ 0.4. Upon further analysis of the electron hole wave functions, inhomogeneous broadening and optical transition strengths, the nanowires with $\rm \rho_D \leq$ 0.4 are unveiled to render favourable properties for the design of photonic devices. Another important outcome of our study is to demonstrate the possibility of modulating the strain character from a compressive to a tensile regime by simply engineering the thickness of the core region. The availability of such a straightforward knob for strain manipulation would be highly desirable for devices involving polarisation-sensitive light interactions.

On Optical Properties of Gaas and Gaas/Algaas Core-Shell Periodic Nanowire Arrays

On Absorption Properties of GaAs/AlGaAs Nanowire Arrays

Optical, structural, and numerical investigations of GaAs/AlGaAs core-multishell nanowire quantum well tubes

Optical Characteristics of Gaas Nanowire Solar Cells

Growth, Structural and Optical Properties of GaAs/AlGaAs Core/Shell Nanowires with and without Quantum Well Shells

Band structure of n- and p-doped core-shell nanowires

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon

Optical waveguides and switches based on periodic arrays of carbon nanotubes

Optical and Electrical Properties of Ga-Doped ZnO Nanowire Arrays on Conducting Substrates

Electronic Structure of Nanometer-Scale Semiconductor Wires

Spatially-resolved luminescence and crystal structure of single core–shell nanowires measured in the as-grown geometry

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Ultrafast carrier relaxation dynamics of photoexcited GaAs and GaAs/AlGaAs nanowire array

Elastic limit and relaxation of GaAs/In(Al,Ga)As core/shell nanowires for near-infrared applications

Optical Characterisation Of Catalyst Free Gaasp And Gaasp Core-Shell Nanowires Grown Directly On Si Substrates By Mbe

Room-Temperature Near-Infrared Lasing from GaAs/AlGaAs Core-Shell Nanowires Based on Random Cavity

Photoluminescence Study of GaAs Nanowires with and Without AlGaAs Shell

Structural and Optical Characterization of Vertical GaAs/GaP Core-Shell Nanowires Grown on Si Substrates

Optical properties of single InP and GaAs nanowire heterostructures

Towards low-loss telecom-wavelength photonic devices by designing GaBi$_{x}$As$_{1-x}$/GaAs core$-$shell nanowires

Direct Measure of Strain and Electronic Structure in Gaas/Gap Core-Shell Nanowires