Abstract:Femtosecond optical pump-probe spectroscopy is employed to elucidate the ultrafast carrier nonradiative relaxation dynamics of bare GaAs and a core-shell GaAs/AlGaAs semiconductor nanowire array. Different from the single nanowire conventionally used for the study of ultrafast dynamics, a simple spin coating and peeling off method was performed to prepare transparent organic films containing a vertical oriented nanowire array for transient absorption measurement. The transient experiment provides the direct observation of carrier thermalization, carrier cooling, thermal dissipation and band-gap energy evolutions along with the carrier relaxations. Carrier thermalization occurs within sub-0.5 ps and proceeds almost independently on the AlGaAs-coating, while the time constants of carrier cooling and thermal dissipation are increased by an order of magnitude due to the AlGaAs-coating effect. The concomitant band-gap evolutions in GaAs and GaAs/AlGaAs include an initial rapid red-shift in thermalization period, followed by a slow blue and/or red shift in carrier cooling, and then by an even slower blue shift in thermal dissipation. The evolution is explained by the competition of band-gap renormalization, plasma screening and band-filling. These findings are significant for understanding the basic physics of carrier scattering, and also for the development of flexible optoelectronic devices.

Effects Of Reduced Exciton Diffusion In Ingan/Gan Multiple Quantum Well Nanorods

Temperature-dependent steady and transient emission properties of InGaN/GaN multiple quantum well nanorods

Lateral Carrier Confinement in InGaN Quantum-Well Nanorods

Great Emission Enhancement And Excitonic Recombination Dynamics Of Ingan/Gan Nanorod Structures

Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "negative" Thermal Activation Energy.

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods

High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence

Investigating the exciton dynamics in InGaN/GaN core-shell nanorods using time-resolved cathodoluminescence

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

The Effects of Nanocavity and Photonic Crystal in InGaN/GaN Nanorod LED Arrays

The Impact of Carrier Transport Confinement on the Energy Transfer Between InGaN/GaN Quantum‐Well Nanorods and Colloidal Nanocrystals

Time-resolved and Temperature-Varied Photoluminescence Studies of InGaN/GaN Multiple Quantum Well Structures

Ultrafast carrier relaxation dynamics of photoexcited GaAs and GaAs/AlGaAs nanowire array

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

Characteristics of Nanoporous Ingan/Gan Multiple Quantum Wells

Surface plasmon coupling effects on the behaviors of radiative and non-radiative recombination in an InGaN/GaN quantum well

Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN

Effect of Localization States on the Electroluminescence Spectral Width of Blue–green Light Emitting InGaN/GaN Multiple Quantum Wells

On Resonant Optical Excitation and Carrier Escape in GaInN/GaN Quantum Wells

On the Efficiency Droop of Top-Down Etched Ingan/Gan Nanorod Light Emitting Diodes under Optical Pumping

Non-exponential Photoluminescence Decay Dynamics of Localized Carriers in Disordered InGaN/GaN Quantum Wells: the Role of Localization Length