Abstract:In this work, we show that extraction of the true bulk lifetime from the biexponential decay that follows from low initial carrier density photoluminescence decay experiments is not generally possible, and introduce new models to enable extraction of the bulk lifetime in the case where the initial carrier density exceeds the doping level. From measurements with high initial carrier density, we establish quasi-equilibrium between localized and free carrier states and accurately measure the bulk lifetime. Using our new models, we measure the time constants associated with localization processes as well as nonradiative and radiative bulk recombination in our GaAs double heterostructures grown with molecular beam epitaxy from experiments with varied excitation strength providing initial carrier densities that range from around 1014 to 1017 cm–3. We demonstrate that this approach can be applied to lightly doped (1016 cm–3) materials where the strongest excitation yields initial carrier densities that exceed the doping level. In our n-type sample, we report lifetime values of (22.7 ± 0.1) ns for bulk recombination, (73 ± 1) ns for trap-capture, (51 ± 2) ns for trap-emission, and (63 ± 2) ns for trap-decay, with a low-level injection effective radiative efficiency of (27.5 ± 0.7)%. In our p-type sample, we report lifetime values of (78.9 ± 0.3) ns for bulk recombination, (77.5 ± 0.7) ns for trap-capture, (530 ± 10) ns for trap-emission, and (177 ± 4) ns for trap-decay, with a low-level injection effective radiative efficiency of (47.0 ± 0.8)%. In comparison with the long and short lifetimes extracted from the biexponential decay with weak excitation, the mean bulk lifetime measured with strong excitation was (33 ± 2)% and (53 ± 1)% longer than the short lifetime, and (68 ± 4)% and (103 ± 3)% shorter than the long lifetime in our n-type and p-type samples, respectively. In our n-type sample, the extracted low-level injection nonradiative lifetime was (33 ± 1) ns, and it was observed to remain constant with the injection level. In our p-type sample, the high-level injection nonradiative lifetime was measured to be (30 ± 30)% larger than the low-level injection nonradiative lifetime of (140 ± 2) ns.

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Localized Exciton Dynamics in AlInGaN Alloy

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Abnormal Energy Dependence of Photoluminescence Decay Time in InGaN Epilayer

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Thermodynamics of Carrier Distribution Within Localized Electronic States with a Broad Gaussian Energy Distribution and Its Effect on Luminescence Behavior of Localized States

Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence

Carrier localization mechanisms in InGaN/GaN quantum wells

Decoupling recombination mechanisms and trap state localization in direct bandgap semiconductors using photoluminescence decay

Carrier recombination dynamics in InGaN/GaN multiple quantum wells

Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells

Resolving Exciton Diffusion in Ingaas Quantum Wells Using Micro-Photoluminescence Mapping with A Lateral Excitation

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

Direct Observation and Theoretical Interpretation of Strongly Enhanced Lateral Diffusion of Photogenerated Carriers in InGaN∕GaN Quantum Well Structures

Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures

Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells